Image Number 3 for United States Patent #7274998.
An embodiment of the present invention is a technique to pattern features. An array of nanowires is placed at a distance to a resist layer. The array forms a plurality of light emitting diodes (LEDs). The distance corresponds to a near-field region of the light emitted by the LEDs with respect to the resist layer. A control circuit controls the LEDs to emit the light to pattern a feature in the resist layer.