Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 6 for United States Patent #7271487.

The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

  Recently Added Patents
Gate timing for short servo wedge in disk memory systems
Communication system and time synchronization method
Semiconductor device
Systems and methods for vehicle cruise control
Electromagnetic probe for measuring properties of a subsurface formation
Intelligent and automated code deployment
Architecture and method for multi-aspect touchscreen scanning
  Randomly Featured Patents
Attached infant sleeper and blanket
Chair with movable arms and tables sections
Manual focus device and autofocus camera
Stack up assembly
Apparatus for activating flush valves for urinals and toilet bowls
Tool for assisting spray work at high position
Ideal operational amplifier layout techniques for reducing package stress and configurations therefor
Nucleotide compounds including a rigid linker
Electrostatically-controlled cantilever apparatus for continuous tuning of the resonance wavelength of a fabry-perot cavity
Concrete reinforcing rod holder