Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 5 for United States Patent #7271487.

The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

  Recently Added Patents
Session transfer method, application server, and communications system
Liquid formulations of carboxamide arthropodicides
Pressure-sensitive adhesive composition having an improved release behavior
Linear transformer power supply
Monitoring device for monitoring a display device
Playback device, playback method, and computer program
Print control server, print controlling method, and print control program
  Randomly Featured Patents
Digital media metadata management
Blends of quinone alkide and nitroxyl compounds and polymerization inhibitors
Athletic shoe cover and ankle support combination
Ruthenium compound and method for producing optically active aminoalcohol compound
Apparatus and method for reducing errors in writing to a storage medium
Global bit line restore by most significant bit of an address line
System and method of adjusting smoothing
Communication session soft handover
Correction for debris and low output photosensors in scroll fed scanner using stored initial calibration data
Apparatus for storing and sterilizing bio-hazardous waste