Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for producing transistors










Image Number 15 for United States Patent #7271070.

The invention relates to a method for producing integrable semiconductor components, especially transistors or logic gates, using a p-doped semiconductor substrate. First of all, a mask is applied to the semiconductor substrate in order to define a window that is delimited by a peripheral edge. An n-doped trough is then produced in the semiconductor substrate by means of ion implantation using an energy that is sufficient for ensuring that a p-doped inner area remains on the surface of the semiconductor substrate. The edge area of the n-doped trough extends as far as the surface of the semiconductor substrate. The other n-doped and/or p-doped areas that make up the structure of the transistor or logic gate are then inserted into the p-doped inner area of the semiconductor substrate. The inventive method is advantageous in that it no longer comprises expensive epitaxy and insulation processes. In an n-doped semiconductor substrate, all of the implanted ions are replaced by the complementary species; i.e. n is exchanged for p and vice versa.








 
 
  Recently Added Patents
Ionic compound, anti-static pressure-sensitive adhesive and polarizer comprising the same
Pet cremation urn
Color image forming apparatus with contact control of process units
Maize hybrid X08B748
Medical capsule housing formed by thermal welding
Neuronal differentiation-inducing peptide and use thereof
Synergistic fungicidal interactions of 5-fluorocytosine and other fungicides
  Randomly Featured Patents
Golf themed table
Image sorting apparatus
Blind slats
Aqueous film coating composition containing sodium alginate and preparation thereof
Music search device
Stack and nest bail container
Vehicle propulsion system
Mixtures of aromatic-aliphatic ketones as photoinitiators and photopolymerizable systems containing them
Connector for gas appliances
Peptide carbazates