Resources Contact Us Home
Method for producing transistors

Image Number 15 for United States Patent #7271070.

The invention relates to a method for producing integrable semiconductor components, especially transistors or logic gates, using a p-doped semiconductor substrate. First of all, a mask is applied to the semiconductor substrate in order to define a window that is delimited by a peripheral edge. An n-doped trough is then produced in the semiconductor substrate by means of ion implantation using an energy that is sufficient for ensuring that a p-doped inner area remains on the surface of the semiconductor substrate. The edge area of the n-doped trough extends as far as the surface of the semiconductor substrate. The other n-doped and/or p-doped areas that make up the structure of the transistor or logic gate are then inserted into the p-doped inner area of the semiconductor substrate. The inventive method is advantageous in that it no longer comprises expensive epitaxy and insulation processes. In an n-doped semiconductor substrate, all of the implanted ions are replaced by the complementary species; i.e. n is exchanged for p and vice versa.

  Recently Added Patents
Semiconductor chip, stack module, and memory card
Process for making thermoplastic polymer pellets
Single-pass Barankin Estimation of scatterer height from SAR data
Control service for relational data management
Methods and systems for enabling community-tested security features for legacy applications
Control system of substrate processing apparatus, collecting unit, substrate processing apparatus and control method of the substrate processing apparatus
Haworthia plant named `CAPETOWN`
  Randomly Featured Patents
Assault rifle
Combined slot machine and racing game
Device for metering a gaseous medium
Power supply
Baseball glove
Execution unit for processing a data stream independently and in parallel
Active dynamic vibration absorber apparatus for vehicle
Process for the production of multicolor proofs using precolored toning films