Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for producing transistors










Image Number 15 for United States Patent #7271070.

The invention relates to a method for producing integrable semiconductor components, especially transistors or logic gates, using a p-doped semiconductor substrate. First of all, a mask is applied to the semiconductor substrate in order to define a window that is delimited by a peripheral edge. An n-doped trough is then produced in the semiconductor substrate by means of ion implantation using an energy that is sufficient for ensuring that a p-doped inner area remains on the surface of the semiconductor substrate. The edge area of the n-doped trough extends as far as the surface of the semiconductor substrate. The other n-doped and/or p-doped areas that make up the structure of the transistor or logic gate are then inserted into the p-doped inner area of the semiconductor substrate. The inventive method is advantageous in that it no longer comprises expensive epitaxy and insulation processes. In an n-doped semiconductor substrate, all of the implanted ions are replaced by the complementary species; i.e. n is exchanged for p and vice versa.








 
 
  Recently Added Patents
Semiconductor device and method of manufacturing the same
Electronic system with vertical intermetallic compound
Printed circuit board including electromagnetic bandgap structure
SRAM cells using shared gate electrode configuration
System and method for monitoring network activity
Related news articles
Non-volatile memory cell containing a nano-rail electrode
  Randomly Featured Patents
Display system
Method and apparatus for maximizing the use of available capacity in a communication system
Telephone station repeater
Communication system and method using two-way paging to provide call control
Electronic device and integrated circuit comprising a delta-sigma converter and method therefor
Method and multimedia message center for delivering a multimedia message to a telecommunication device configured as a multimedia message sink, and telecommunication device for accessing multi
Semiconductor device and methods for making the same
Asymmetric semiconductor device having a high-k/metal gate and method of manufacturing the same
Psuedo-microprogramming in microprocessor in single-chip microprocessor with alternate IR loading from internal or external program memories
Timing phase recovery method and apparatus