Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Triazole derivatives as ghrelin analogue ligands of growth hormone secretagogue receptors
Biometric data display system and method
System and method for distributed security
System and method for updating firmware
Grounding fitting
Apparatus and method of managing radio bearer in wireless communication system
Personalized location information for mobile devices
  Randomly Featured Patents
Semiconductor memory device having thin film transistor and method of producing the same
Safety debris catcher
Safety disconnection with asymmetric lamp power
Circuit to protect a light element
Apparatus for constraining moving photographic film
Secure housing for an electronic unit
Theater cabinet table
Video projector
Tape carrier for semiconductor apparatus
Methods and systems for performing differential radiography