Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Fusion of road geometry model information gathered from disparate sources
Plants and seeds of hybrid corn variety CH424126
Systems and methods for dynamically modifying subcriber service profile stored in home location register while roaming in wireless telecommunication networks
Engineered nucleic acids encoding a modified erythropoietin and their expression
Frame timing synchronization in a geostationary satellite system
Apparatus for performing timer management regarding a system timer scheduler service, and associated method
Media processing method and device
  Randomly Featured Patents
Condoms with improved security
Exercise machine with controllable resistance
Method and apparatus in a packet switched network
Vehicle foot peg
Underwater hydrogen storage
Method and apparatus for low froth agitation of tanked fluids
Clam belly extractor
Animated paddle
Recloseable coffee cup cover
Grooming stand