Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Stable file system
Synthetic bone grafts
Mounting structure, electro-optical apparatus, and touch panel
Dynamic facsimile transcoding in a unified messaging platform
Wireless subscriber managing storage of HARQ packets
Method of sheet alignment and method of post-processing comprising the same and method of image formation
Imaging device and imaging method
  Randomly Featured Patents
Peptides that mimic non-human cross-reactive protective epitopes of the group B meningococcal capsular polysaccharide
Computerized roulette game table
Hand manipulated dual controller assembly
System and method for providing network level and nodal level vulnerability protection in VoIP networks
Apparatus for detecting a condition of burning in an internal combustion engine
Wheel end system
Descending staircase read technique for a multilevel cell NAND flash memory device
Evaluating models using forecast error attribution
Coherency of related objects