Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Method, preprocessor, speech recognition system, and program product for extracting target speech by removing noise
Closed cell culture system
Method for manufacturing non-volatile memory device, non-volatile memory element, and non-volatile memory device
Communication network management system, method and program, and management computer
Battery grid
Display device and method of repairing display device
High electron mobility transistor and manufacturing method thereof
  Randomly Featured Patents
LED Channel number display responsive to ambient light level
Total internal reflection light modulating microstructure devices
Water exerciser
Methods and apparatus for producing granular compositions
Assessment results viewer
Apparatus especially useful for detection of neisseria gonorrhoeae and the like in females
Removable grip for a bucket
N-Substituted 2-methylnaphthylamides, their preparation, and their use for controlling fungi
Intraocular lens insertion system
Plasma processing method and plasma processing apparatus