Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Interface engineering to improve adhesion between low k stacks










Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.








 
 
  Recently Added Patents
Backlight assembly, method for driving backlight assembly, and liquid crystal display having the same
Method and laser receiver for acoustically indicating a laser beam
Rotating sunlight/light beam for fractional/beneficial use
Faucet
Package for a medicinal product
System and method for optimizing use of plug-in air conditioners and portable heaters
Approaching object detection system
  Randomly Featured Patents
Overhead downlight fluorescent light fixture
Methods and systems to allocate addresses in a high-endurance/low-endurance hybrid flash memory
Packaging assembly and method of assembling
Meeting manager
Device for tethering a fitting to a flat surface
Fluid tank apparatus
Extensible and programmable multi-tenant service architecture
Management of physiological and psychological state of an individual using images personal image profiler
Sporting and recreational facility slide
Vehicle headlight