Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region
Manufacturing method power semiconductor device
Semiconductor devices having through electrodes and methods of fabricating the same
MOS resistor apparatus and methods
System and method for hybrid risk modeling of turbomachinery
Orthogonal tunable antenna array for wireless communication devices
Switched capacitor hold-up scheme for constant boost output voltage
  Randomly Featured Patents
Method for producing decorative paper using a slot coater, decorative paper, and decorative laminates prepared therefrom
Crystalline forms of valacyclovir hydrochloride
Device for measuring pressure points to be applied by a compressive orthotic device
Shock absorbing device for ski poles, walking sticks, crutches and similar articles
Lock for a sliding door
Optical fiber connector including a biasing means in housing
Approaches to actively protect spacecraft from damage due to collisions with ions
Modular rotary discoid valve assembly for engines and other applications
Balanced-unbalanced transformation device and method for manufacturing balanced-unbalanced transformation device
Passive radiator having mass elements