Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Method and apparatus for organizing segments of media assets and determining relevance of segments to a query
Method and apparatus of motion vector prediction with extended motion vector predictor
Methods for selective reverse mask planarization and interconnect structures formed thereby
Unified recovery
Calcium carbonate granulation
  Randomly Featured Patents
Lock bolt with a warped contact surface
Resolver and resolver-rolling bearing unit
Footwear upper
Methods and apparatus for structure layout optimization for multi-threaded programs
Method and a device for performing torus-based cryptography
Hysteresis in thermal throttling
Remote lighting control system
Emergency signal flag
Image display device
Wallpaper removing steamers