Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Interface engineering to improve adhesion between low k stacks










Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.








 
 
  Recently Added Patents
System and method of creating and providing SMS http tagging
Error detection and recovery tool for logical volume management in a data storage system
Wound dressings
Method and apparatus for triggering expiration of a data tag device
Scanning projection apparatus with tangential compensation
Simultaneous enhancement of transmission loss and absorption coefficient using activated cavities
Methods and devices for rapid and specific detection of multiple proteins
  Randomly Featured Patents
In-plane switching LCD panel
Inductively heatable components
Automatic pulsing valve
Trace metal ion reduction by Ion Exchange Pack
Golf club shaft
Glass-ceramic coatings and sealing arrangements and their use in fuel cells
System and method for intraluminal imaging
Self-similar traffic generation
Cap assemblies for lamps
Method and system for a slide type portable terminal