Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Using location based services for determining a calling window
Isolated Australian coral reef fluorescent proteins and cell-based kinase or phosphatase platforms for cancer drug development
Area efficient through-hole connections
Policy based cryptographic application programming interface in secure memory
Electronic device including predicted frequency error estimation of a voltage controlled oscillator and related methods
Simultaneous image distribution and archiving
  Randomly Featured Patents
Method and systems for automatically creating a data feed file for use with desktop applications
Light emitting semiconductor mount
Camera head including an image pixel array and a preamplifier module
Automatic head retract system for disk drive
Exit iluminator assembly for a motor vehicle
Rinse composition
Process cartridge toner supply arrangement for image forming apparatus
Food container
Method and apparatus for supporting printed board
System and method to provide a domain split display