Resources Contact Us Home
Interface engineering to improve adhesion between low k stacks

Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

  Recently Added Patents
Structure of pixel electrode
Systems and methods for implementing pressure sensitive keyboards
Systems and methods for automated institutional processing of payments
Electronic component and a system and method for producing an electronic component
Method and device for peer arrangement in single substream upload P2P overlay networks
Distortion estimation for quantized data
Touch sensing technology
  Randomly Featured Patents
Ni-Cr-Co alloy for advanced gas turbine engines
Cutting device and tape printing apparatus equipped therewith
Systems and methods for distinguishing cardiac ischemia from systemic influences on IEGM morphology using an implantable medical device
Method of molding a lens array
Addition of unsaturated epoxy monomer to Si-H with chloroplatinic acid and HCl-acceptor
Calcilytic compounds
Device for monitoring the presence of a person using proximity induced dielectric shift sensing
Array substrate for liquid crystal display device and method of fabricating the same
Chassis dynamometer
Method for fabricating semiconductor device having vertical gate