Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Interface engineering to improve adhesion between low k stacks










Image Number 3 for United States Patent #7259111.

A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.








 
 
  Recently Added Patents
Microfluidic cartridge and method of using same
Document layout method
Automatic fixup of network configuration on system image move
Receiver with feedback continuous-time delta-sigma modulator with current-mode input
Method and system for remote delivery of email
Global alignment for high-dynamic range image generation
Deadline-driven parallel execution of queries
  Randomly Featured Patents
Spinning machine
Collapsible container
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
High frequency power sensing device
Graphics system with shadow ram update to the color map
Cylinder liner for a cylinder crankcase
System and method for generating a cyclic redundancy check
Wheel or endless track
Decorative water lamp
Vertical source/drain contact semiconductor