Resources Contact Us Home
Oxygen plasma treatment for enhanced HDP-CVD gapfill

Image Number 7 for United States Patent #7229931.

Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 10.sup.11 ions/cm.sup.3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 10.sup.11 ions/cm.sup.3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.

  Recently Added Patents
Embedded package and method for manufacturing the same
Soybean EF1A promoter and its use in constitutive expression of transgenic genes in plants
Adaptive frame scanning scheme for pulsed X-ray imaging
Discovery, analysis, and visualization of dependencies
Secure access to customer log data in a multi-tenant environment
Method, system, and computer program product for scoring theoretical peptides
  Randomly Featured Patents
Device for mixing fluids
Device for displacing a member, primarily a stage for optical instruments, in arbitrary directions in one and the same plane
Phase-locked loops having two amplifiers for driving a vco
Directional control system for artillery missiles
Boiler control having a heating value computer and providing improved operation with fuels having variable heating values
Circuit for detection of off-hook condition of extension telephones
Microdisplay system
Liquid crystal display apparatus and driving method
Method for edge mounting flex media to a rigid PC board
Modular filter apparatus