Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Oxygen plasma treatment for enhanced HDP-CVD gapfill










Image Number 7 for United States Patent #7229931.

Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 10.sup.11 ions/cm.sup.3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 10.sup.11 ions/cm.sup.3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.








 
 
  Recently Added Patents
Solution based precursors
System and method for supporting fibre channel over ethernet communication
Digital camera dock having movable guide pins
Method and apparatus for decoding/encoding a video signal with inter-view reference picture list construction
Communications in an asynchronous cellular wireless network
Scanning of a touch screen
Circuit device for preventing radiation emission in portable terminal with two cameras
  Randomly Featured Patents
Belt removal tool
Video calling method capable of providing video through third display
Electrophotographic development system with induction charged toner
Method and apparatus for compressing multispectral images
Process of manufacturing rapid reconstitution root vegetable products
Low voltage CMOS analog multiplier with extended input dynamic range
Hand shear
Document management and access control by document's attributes for document query system
Pan and tilt camera
High-temperature regenerator