Resources Contact Us Home
Oxygen plasma treatment for enhanced HDP-CVD gapfill

Image Number 7 for United States Patent #7229931.

Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 10.sup.11 ions/cm.sup.3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 10.sup.11 ions/cm.sup.3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.

  Recently Added Patents
Non-aqueous electrolyte battery
Light modulators and optical apparatuses including the same
High sensitivity stress sensor based on hybrid materials
Smart television system having methods or means for accessing paid or subscribed digital content from the internet
Transmitting a synchronizing signal in a packet network
Vacuum cleaner filter adapter ring
Single mode optical fiber with improved bend performance
  Randomly Featured Patents
Priority based processor reservations
Die for the extrusion of material in tube form
Lap-supportable remote infrared computer keyboard
Solvent extractor
Method and apparatus for separating elongate elements
Light source module
Light emitting diode module
Laser system for recording data patterns on a planar substrate
Methods and genetic compositions to limit outcrossing and undesired gene flow in crop plants
Low flow rate-low pressure atomizer device