Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Oxygen plasma treatment for enhanced HDP-CVD gapfill










Image Number 7 for United States Patent #7229931.

Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 10.sup.11 ions/cm.sup.3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 10.sup.11 ions/cm.sup.3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.








 
 
  Recently Added Patents
Photoelectric conversion module
Utility knife
Inducement of organogenetic tolerance for pancreatic xenotransplant
Method of sheet alignment and method of post-processing comprising the same and method of image formation
Sink
Soft co-processors to provide a software service function off-load architecture in a multi-core processing environment
Flat panel crystal display employing simultaneous charging of main and subsidiary pixel electrodes
  Randomly Featured Patents
Extended-release chemical formulation in tablet form for urine pretreatment
Roll
Method, apparatus, signals, and medium for managing power in a hybrid vehicle
Benzyloxypyrimidine derivative, processes for producing the same and herbicidal composition
High power implantable battery with improved safety and method of manufacture
Method, apparatus and system for saving instant message
Automatic transmission system for vehicles
Lace system for footwear
Vapor cooling device for semiconductor device
Growth differentiation factor-6