Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Oxygen plasma treatment for enhanced HDP-CVD gapfill










Image Number 7 for United States Patent #7229931.

Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 10.sup.11 ions/cm.sup.3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 10.sup.11 ions/cm.sup.3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.








 
 
  Recently Added Patents
Press nut
Agents for preventing and treating disorders involving modulation of the ryanodine receptors
Methods and systems for adapting a user environment
Liquid low temperature injection molding process
Adjustable voltage regulator with dynamic voltage compensation
Dynamic facsimile transcoding in a unified messaging platform
Method of publicly displaying a person's relationship status
  Randomly Featured Patents
Optical transmission system including optical restoration
Self steering suspension assembly
Vacuum pill dispensing cassette and counting machine
Liquid crystal display
Culvert cleanout device
Extractor for use in dental treatment
Nebulizer bag
Soft-sided air displacement volumometer
Dimer VEGF antagonist formulations
Semiconductor integrated circuit device having logic circuit and dynamic random access memory on the same chip