Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of producing a semiconductor device having a multi-layered insulation film










Image Number 6 for United States Patent #7229910.

The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectric constant, and for that purpose there is provided a wiring structure with the copper film embedded in the insulation film of the wiring layer, wherein the insulation film of the wiring layer is of a multi-layered structure with the laminated methyl silisesquioxane (MSQ) film, methylated hydrogen silisesquioxane (MHSQ) film and silicon oxide film.








 
 
  Recently Added Patents
MEMS autofocus actuator
Methods and apparatus for processing audio signals
Display for gloves
Asynchronous loading of scripts in web pages
Differentiated PSIP table update interval technology
Wheel
Automated gate system
  Randomly Featured Patents
Visor for a computer terminal display and method
Method for monitoring oil flow in an oil-lubricated vacuum pump
Treatment of cancer with glutamine
High throughput screening assay for detecting a DNA sequence
Discharge tube for a gas laser
Combustion apparatus with atomizer and method of controlling same
Method of controlling shared data among computers
Blank arrangement
Side view type light emitting diode
Frequency and time slot synchronizaton using adaptive filtering