Resources Contact Us Home
Method of producing a semiconductor device having a multi-layered insulation film

Image Number 6 for United States Patent #7229910.

The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectric constant, and for that purpose there is provided a wiring structure with the copper film embedded in the insulation film of the wiring layer, wherein the insulation film of the wiring layer is of a multi-layered structure with the laminated methyl silisesquioxane (MSQ) film, methylated hydrogen silisesquioxane (MHSQ) film and silicon oxide film.

  Recently Added Patents
Trash receptacle
Specification of latency in programmable device configuration
Wristband with detachable labels
Powerline communication device with load characterization functionality
Electric vehicle charging station parking meter systems
Tunnel magnetoresistance read head with narrow shield-to-shield spacing
Cooling structure for electronic device
  Randomly Featured Patents
Human monoclonal antibodies to CTLA-4
System and method for cooling multiple logic modules
Magnetic recording medium and method of manufacturing the same
Composite material for electrical applications reinforced by para-oriented aramide fibrous substance and process for preparing same
Dual detector pulsed neutron logging for providing indication of formation porosity
Pipe make/break apparatus with gripping jaws and adjustable pipe spinner with oiling system
Charge depleting energy management strategy for plug-in hybrid electric vehicles
Dispensing package
Method of continuous casting