Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of producing a semiconductor device having a multi-layered insulation film










Image Number 6 for United States Patent #7229910.

The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectric constant, and for that purpose there is provided a wiring structure with the copper film embedded in the insulation film of the wiring layer, wherein the insulation film of the wiring layer is of a multi-layered structure with the laminated methyl silisesquioxane (MSQ) film, methylated hydrogen silisesquioxane (MHSQ) film and silicon oxide film.








 
 
  Recently Added Patents
Sense-amplifier monotizer
Display screen with graphical user interface
Near-field transducers for focusing light
Systems and methods for redox flow battery scalable modular reactant storage
Nanoparticles in a flash memory using chaperonin proteins
Device with a floating head having a heater element
Organic light-emitting display with black matrix
  Randomly Featured Patents
Optimization of organic bottom anti-reflective coating (BARC) thickness for dual damascene process
Set of ribs in a dewatering device in a paper machine
Resin encapsulation semiconductor device utilizing grooved leads and die pad
Voltage stress alterable ESD protection structure
Security infrastructure for electronic transactions
Controller housing
Process for optically active 2-alkyl-2,5-diazabicyclo(2.2.1) heptanes
Method for orientating print material for correct printing in a printing position externally of a printing position
Sterile thermometer sheath
Lockable joint for articulated members