Resources Contact Us Home
Method of producing a semiconductor device having a multi-layered insulation film

Image Number 6 for United States Patent #7229910.

The object of the present invention is to improve the interfacial adhesion between the film with low dielectric constant and protective film, without damaging the excellent dielectric, flatness and gap-filling characteristics of the organic material of low dielectric constant, and for that purpose there is provided a wiring structure with the copper film embedded in the insulation film of the wiring layer, wherein the insulation film of the wiring layer is of a multi-layered structure with the laminated methyl silisesquioxane (MSQ) film, methylated hydrogen silisesquioxane (MHSQ) film and silicon oxide film.

  Recently Added Patents
Non-zero rounding and prediction mode selection techniques in video encoding
White polyester film and surface light source therewith
High-performance AHCI interface
Liquid formulations of carboxamide arthropodicides
Biomedical electro-stimulator
Asynchronous distributed de-duplication for replicated content addressable storage clusters
Shape memory polymers formed by self-crosslinking of copolymers
  Randomly Featured Patents
Apparatus, system, and method flushing data from a cache to secondary storage
Automatic rate matching system
Configurable trailer hitch apparatus
Shoe sole
Method and apparatus for predicting and preventing attacks in communications networks
Networked computer graphics rendering system with multiple displays for displaying multiple viewing frustums
Pluggable conversion module for a data transport card of a wavelength division multiplexing system
Wakeboard tower with sun cover and ski tow point
Surgical needle extractor having a disposable chuck, a chuck and a handle
Dual flush cistern button arrangement