Resources Contact Us Home
Substrate processing method

Image Number 11 for United States Patent #7226874.

A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.

  Recently Added Patents
Electromagnetic shield for a passive electronic component in an active medical device implantable lead
System and method for combining different tablets into a pouch
Electronic component
System, apparatus and method for enabling/disabling display data channel access to enable/disable high-bandwidth digital content protection
Phosphor adhesive sheet, light emitting diode element including phosphor layer, light emitting diode device, and producing methods thereof
Method for adjusting link speed and computer system using the same
Medical imaging probe with rotary encoder
  Randomly Featured Patents
Fuel reserving device
Universal electronic identification tag
Cartridge retention mechanism for a removable cartridge drive
Trampoline having a jumping bed with elastic straps for supporting the same on trampoline frame
Container for lotion
Gum massager
Anodic coating with enhanced thermal conductivity
Method of calculating two-dimensional wavefront aberration
Multiple blade set strip apparatus for cable and wire