Resources Contact Us Home
Substrate processing method

Image Number 11 for United States Patent #7226874.

A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.

  Recently Added Patents
Graphical user interface for interpreting the results of image analysis
Hand-held electronic display device
Measuring current and resistance using combined diodes/resistor structure to monitor integrated circuit manufacturing process variations
Bundled flexible cable with water resistant structure
Calibration of quadrature imbalances using wideband signals
Method and system for distributing load by redirecting traffic
Method for resource allocation in a wireless communication network, method for error-free transmission of information, node and wireless communication network
  Randomly Featured Patents
Method and apparatus for extruding a layer of extrudable material on a body having inaccessible ends
Method of manufacturing heat-transfer wall for vapor condensation
Motor vehicle body side wall
Dispensing holder for paper towels or the like
Multi-frequency antenna with dual loops
Method for the management of incontinence
Signal synchronization and frequency synthesis system configurable as PLL or DLL
Inverter apparatus and solar power generation apparatus
Fishing lure
Peroxyacid bleach compositions