Resources Contact Us Home
Substrate processing method

Image Number 11 for United States Patent #7226874.

A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.

  Recently Added Patents
System and method for distributing video conference data over an internet protocol television system
Touch display apparatus and backlight module
Photocurable composition and process for producing molded product having fine pattern on its surface
Method and apparatus for reducing combiner loss in a multi-sector, omni-base station
Circuit sharing time delay integrator
Test head moving apparatus and electronic component testing apparatus
  Randomly Featured Patents
Accessory interface for a tool
Coextruded, biaxially oriented polyester film for metallizing, its use and process for its production
Synthetic diesel fuel and process for its production
Shell restraining device for an anti-armour weapon
Turbine stator vane with near wall integrated micro cooling channels
Biaxially oriented film with better surface quality based on crystallizable polyesters and process for producing the film
Safety panel for attachment to a bed
Method of manufacturing devices having vertical junction edge
Storage device having low power mode and methods thereof
Method and apparatus for starting a gas turbine engine