Resources Contact Us Home
Nanoelectronic devices and circuits

Image Number 5 for United States Patent #7224026.

Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to .mu.A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.

  Recently Added Patents
Electronic device, communication control method of electronic device, and information terminal device
Phone messaging using audio streams
Semiconductor process
Wall flow type exhaust gas purification filter
Controller interface providing improved data reliability
Flexible pouch
  Randomly Featured Patents
Apparatus and method for performing external surface work on ships' hulls
Novel electrolysis cell
Remotely controlled vehicle with a track mechanism and independently operated wheels
Aluminum metallization method
Preparation of 3-bromo-4-fluorobenzaldehyde and its acetals
Method and apparatus for analyzing image, and computer product
Hydrophilic polymeric coatings for medical articles
Method of feedback control for active damping of slider air bearing vibrations in a hard disk drive slider
Acoustic wave device and method of manufacturing acoustic wave device
Method and apparatus for separating solids from gas in a high pressure solids-gas stream utilizing a packed bed of the solids