Resources Contact Us Home
Nanoelectronic devices and circuits

Image Number 5 for United States Patent #7224026.

Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to .mu.A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.

  Recently Added Patents
Mineral, nutritional, cosmetic, pharmaceutical, and agricultural compositions and methods for producing the same
Support tray for server
Motion-compensated prediction of inter-layer residuals
Precoding codebooks for MIMO communication systems
Digital image processing device and processing method thereof
Variety corn line NPAA2675
  Randomly Featured Patents
Enhanced data formats and machine operations for enabling error correction
Dynamic syncronous pivoting boot and foot mounting system for sportingboards
Computer-implemented systems and methods for determining future profitability
Spread spectrum cellular handoff method
Inspection glass light
Interface for supplying power to a load from an electrical power supply network
Full grip rounded cookware handle
Holder for a dispenser package
Emitter follower circuit with MOSFET
Extension persistence mechanism for a digital image format