Resources Contact Us Home
Nanoelectronic devices and circuits

Image Number 5 for United States Patent #7224026.

Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to .mu.A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.

  Recently Added Patents
Produce container and lid assembly
Categorization of design rule errors
Use of a high-oleic and high-tocol diet in combination with a non-tocol antioxidant for improving animal meat quality
Technique for skipping irrelevant portions of documents during streaming XPath evaluation
System and method for receiving MBMS broadcasting service
Systems, methods, and devices for selling transaction instruments via web-based tool
Medicament container
  Randomly Featured Patents
Shim coil for nuclear magnetic resonance imaging apparatus
Cover assembly for a cradle unit having an ink refilling capabilities
Modular floor cover
Hydrogen engine system with metal hydride container
Distributed constant type multiple-line circuit
Method for surface-release coating and coating agent therefor
Color conversion type organic EL display
High performance materials and processes for manufacture of nanostructures for use in electron emitter ion and direct charging devices
Method for the manufacture of a composite metal wire
Wire clamping device and wire clamping method