Resources Contact Us Home
Nanoelectronic devices and circuits

Image Number 5 for United States Patent #7224026.

Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to .mu.A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.

  Recently Added Patents
Noise spectrum tracking in noisy acoustical signals
Method for exchanging data concerning an electronic transaction
Artificial engine sound control unit, approaching vehicle audible system, and electric vehicle having them
Delay lines, amplifier systems, transconductance compensating systems and methods of compensating
Mobility management in a communications system
Produce container and lid assembly
Semiconductor device and method of manufacturing the same
  Randomly Featured Patents
System for remotely controlling energy distribution at local sites
Handwritten character recognition apparatus
Automatic capture and management of images
Tampon applicator
Prismatic battery having a welding window
Method of manufacture stator for an automotive alternator
Processing bag for component separator system and method of removing separated components
Bag palletizing system and method
Method and formulation for the extraction of nucleic acids from any complex starting materials
Semiconductor device with a fast lateral dmost provided with a high-voltage source electrode