Resources Contact Us Home
Nanoelectronic devices and circuits

Image Number 5 for United States Patent #7224026.

Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to .mu.A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.

  Recently Added Patents
Magnetic field detecting device with shielding layer at least partially surrounding magnetoresistive stack
Electric heating device
Information processing device and program for display and use of multiple windows
Orthogonal frequency division multiplexing-code division multiple access system
Method for measuring human megalin
Radio frequency optical communication system
Solar cell with structured gridline endpoints vertices
  Randomly Featured Patents
Prosthesis with interlocking fixation and providing reduction of stress shielding
Capsule for dental materials
Game table covering
Apparatus and method for reallocating logical to physical disk devices using a storage controller, with access frequency and sequential access ratio calculations and display
Keyboard musical instrument learning aid
Evaporation material for the production of average refractive optical layers
Seating assist device with adjustable spring assembly
Portable DVD player
Processor with conditional instruction execution based upon state of corresponding annul bit of annul code
Preservatives and their use