Resources Contact Us Home
Nanoelectronic devices and circuits

Image Number 5 for United States Patent #7224026.

Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to .mu.A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.

  Recently Added Patents
Data storage device and block selection method for a flash memory
Extensible framework for client-based active network measurement
Area reduction for surface mount package chips
Routing of data including multimedia between electronic devices
Redundant power delivery
Method, base station and system for adjusting cell wireless configuration parameter
Scanning projection apparatus with tangential compensation
  Randomly Featured Patents
Conductive polymer device and method of manufacturing same
Inhalation device
Hood lift mechanisms utilizing active materials and methods of use
Light scanning device and image forming apparatus provided with the same
Processing and display of a real world model
Ink jet inks containing branched polymer dispersants and emulsion polymer additives
Storage case for disc-shaped recording media
Open-sided musical drum
Mechanical alloying of a hydrogenation catalyst used for the remediation of contaminated compounds
Monohaloalkenyl benzoates and trihaloalkyl benzoates