Resources Contact Us Home
Nanoelectronic devices and circuits

Image Number 5 for United States Patent #7224026.

Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at least 100 nm long and less than 100 nm wide. The current-voltage characteristic of the diode devices are similar to a conventional diode, but both the threshold voltage (from 0V to a few volts) and the current level (from nA to .mu.A) can be tuned by orders of magnitude by changing the device geometry. Standard silicon wafers can be used as substrates. A full family of logic gates, such as OR, AND, and NOT, can be constructed based on this device solely by simply etching insulative lines in the substrate.

  Recently Added Patents
Method and system for dynamically representing distributed information
Computer-implemented method of constructing a stock index using index rotation
Shield for vacuum circuit breaker
Color image display device, color filter substrate, color pixel array substrate, and electronic device
Multilayered material sheet and process for its preparation
Meter socket cabinet
Mirror elements for EUV lithography and production methods therefor
  Randomly Featured Patents
Soft drink can crusher
Exterior armor for use on bottom of helicopter
Method and apparatus for testing electronic device
Stabilizing additives for polyolefins
Turbine housing system
Cosmetic applicator
Method and device for pressure balancing of hoses at extruding of two components
X-Y position sensor
Floating cooler
Door anti-hijacking latch/lock mechanism with pneumatic decompression override