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Process for controlling performance characteristics of a negative differential resistance (NDR) device

Image Number 10 for United States Patent #7220636.

A variety of processes are disclosed for controlling NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (V.sub.NDR) and related parameters. The processes are based on conventional semiconductor manufacturing operations so that an NDR device can be fabricated using silicon based substrates and along with other types of devices.

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