Resources Contact Us Home
Method for forming polycrystalline silicon film of polycrystalline silicon TFT

Image Number 4 for United States Patent #7205033.

Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

  Recently Added Patents
Process and intermediates for preparing lapatinib
Mobile computing terminal
System and method for providing radio communication in a land mobile radio system
Antenna tuning on an impedance trajectory
Synthesized interoperable communications
Electronic communication device
Prioritizing application data for transmission in a wireless user device
  Randomly Featured Patents
Magnetic recording medium with a nialru seedlayer
Friction thread feed device
Device for micro-adjusting bicycle brake holder
Recordable optical disc
Recording medium, playback apparatus, program, and playback method
Method for forming plating film
Fuel injection system for a multi-cylinder engine
Image display system and image display apparatus
Flow controller
Contact lens wetting agents