Resources Contact Us Home
Method for forming polycrystalline silicon film of polycrystalline silicon TFT

Image Number 4 for United States Patent #7205033.

Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

  Recently Added Patents
PLL circuit
Quinoid thiophene organic photoelectric material, preparation method thereof and application thereof
Image forming apparatus, control method and computer-readable medium for stopping a print job during printing by a printer
Use of Lactobacillus for liver protection
Color image display device, color filter substrate, color pixel array substrate, and electronic device
Image forming apparatus detecting color patterns and generating interleaf images at predetermined position
Method for designing sunlight-reflection and heat-radiation multilayer film
  Randomly Featured Patents
Memory device using movement of protons
Device for occupant protection in a motor vehicle and for anti-theft protection of the motor vehicle
Silicon light-receiving device
Method of eliminating interference signals from video signals
Cylinder-type perpetual calendar assembly
Portable reading device with mode processing
Process of dyeing flocked textile fibers
System and method for speeding XML construction for a business transaction using prebuilt XML with static and dynamic sections
Silane adhesion catalysts
Infant bath seat