Resources Contact Us Home
Method for forming polycrystalline silicon film of polycrystalline silicon TFT

Image Number 4 for United States Patent #7205033.

Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

  Recently Added Patents
Switching apparatus and controlling method thereof
Baseball player stationery tab
Power supply system for a data storage system and a method of controlling a power supply
Sheet coil type resolver
Self-service channel marketplace
Telephone line seizure module
Systems and methods for identifying malicious domains using internet-wide DNS lookup patterns
  Randomly Featured Patents
Wind turbine blade with strain sensing means, wind turbine, block sensor unit and uses hereof
Method of performing static timing analysis considering abstracted cell's interconnect parasitics
Electrophotographic apparatus for forming a duplicated image at any desired position on a record carrier
Genes and polynucleotides associated with ultraviolet radiation-mediated skin damage and uses thereof
Traffic information processing apparatus, traffic information management server, traffic information management system
Intraocular lens insertion apparatus
Control system and control method for automatic transmission
Amidinosulphonic acid derivatives
Image processing apparatus, image processing method, and computer product
System and method for supporting context switching within a multiprocessor system having functional blocks that generate state programs with coded register load instructions