Resources Contact Us Home
Method for forming polycrystalline silicon film of polycrystalline silicon TFT

Image Number 4 for United States Patent #7205033.

Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

  Recently Added Patents
Non-volatile flash-RAM memory with magnetic memory
Oral care implement accessory
Storage apparatus and storage apparatus management method performing data I/O processing using a plurality of microprocessors
Input device with photodetector pairs
Transaction cost recovery queue management
Towel clip
Matching a usage history to a new cloud
  Randomly Featured Patents
Boat boarding ramp
Thermally primed hydrogen-producing fuel cell system
Motorized activation
Waste-gas suppressor for internal-combustion engines
Over-running clutch pulley with composite sealing member
DIY window curtain
Surface adjustable adjustable bent housing
Cutting device for separating individual laminated chip assemblies from a strip thereof, method of separation and a method of making the cutting device
Delivery device for an acidity monitoring system
Connecting rod made of fiber reinforced synthetic material