Resources Contact Us Home
Method for forming polycrystalline silicon film of polycrystalline silicon TFT

Image Number 4 for United States Patent #7205033.

Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

  Recently Added Patents
Vehicle location information-based abnormal driving determination and warning system
Image forming apparatus with static elimination
Pattern transfer apparatus and method for fabricating semiconductor device
Dose escalation enzyme replacement therapy for treating acid sphingomyelinase deficiency
Voltage regulators with improved wake-up response
System and method of error reporting in a video distribution network
  Randomly Featured Patents
Mesogenic materials with anomalous birefringence dispersion and high second order susceptibility (X(2))
Apparatus for the return of particulate solids through a cyclone separator to a vessel
Recording apparatus
Directional valve
Bit striking apparatus for use in an excavator
Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures
Brightness measuring apparatus for providing adequate object brightness and a flashlight emission apparatus providing adequate exposure, irrespective of photographing conditions
Construction element
Truck bed cap assembly device
Pyrotechnic munition and process