Resources Contact Us Home
Device with quantum dot layer spaced from delta doped layer

Image Number 18 for United States Patent #7199391.

A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of the device; and providing an auxiliary layer disposed in one of the adjacent layers, and spaced from the layer of quantum dots, the auxiliary layer being operative to communicate carriers with the layer of quantum dots.

  Recently Added Patents
Automated top-down multi-abstraction infrastructure performance analytics -network infrastructure-as-a-service perspective
Semiconductor devices and methods for changing operating characteristics and semiconductor systems including the same
Flexible lighting devices
Redistribution layer (RDL) with variable offset bumps
Statistical identification of instances during reconciliation process
Battery loading and unloading mechanism
Estrogen receptor ligands
  Randomly Featured Patents
Tablet containing an enzymatically converted starch derivative encapsulating agent
Misalignment detector and image forming apparatus
Method for multidirectional sheet feeding
Electromagnetic contactor unit
Process for obtaining complex of 3-methoxy-N-methylmorphinan with 7-theophyllineacetic acid (1:2)
Semiconductor memory device and refresh control method
Water base pigment ink compositions for use in marking pens
Output circuit, liquid crystal driving circuit, and liquid crystal driving method
Combined earphone and microphone
Molding apparatus with rotatable sprue bushing