Resources Contact Us Home
Device with quantum dot layer spaced from delta doped layer

Image Number 16 for United States Patent #7199391.

A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of the device; and providing an auxiliary layer disposed in one of the adjacent layers, and spaced from the layer of quantum dots, the auxiliary layer being operative to communicate carriers with the layer of quantum dots.

  Recently Added Patents
DFPase enzymes from Aplysia californica
Microcapsules, their use and processes for their manufacture
Process for making thermoplastic polymer pellets
Semiconductor process
Method for parking or exiting a parking bay and for avoiding a collision of a vehicle, and corresponding assistance systems and vehicle
Integrated bug tracking and testing
Image processing device, image forming apparatus, and non-transitory computer readable recording medium
  Randomly Featured Patents
Printing apparatus and printing system
Tool rack
Method for manufacturing field emission electron source having carbon nanotubes
Portable water level-responsive dock securing system and method of use thereof
Recording and/or reproducing apparatus, recording and/or reproducing method and information storage medium therefor
Temperature responsive switch with shape memory actuator
Apparatus and processes for the concentration of sulphuric acid
Putter head
Head cartridge and liquid ejection apparatus
Method for producing metal/ceramic bonding substrate