Resources Contact Us Home
Wafer with vertical diode structures

Image Number 13 for United States Patent #7170103.

A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The diode opening is initially filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that is heavily doped with a first type dopant and a bottom portion that is lightly doped with a second type dopant. The top portion is bounded by the bottom portion so as not to contact the titanium silicide layer. For one embodiment of the vertical diode, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.

  Recently Added Patents
Systems and methods for providing improved power performance in wireless communication systems
Method and apparatus for inserting a filled prosthetic bladder into a patient
Power transmitting fluid composition
Lighting device with switchable day/night illumination mode
Camera rotation mechanism and portable electronic apparatus therewith
Track-mounted decorative lighting apparatus
Electronic credit card with fraud protection
  Randomly Featured Patents
Back-up clamp component
Optically controlled read only memory
Method and apparatus for performing localized thermal analysis and sub-surface imaging by scanning thermal microscopy
Wrist watch type GPS receiver
Inflatable bolster
Waste sorting system utilizing removable liners
Protective frame for directional decal
Keyboard apparatus
Expansion apparatus having three borehole-channel systems
Call routing management based on caller language