Resources Contact Us Home
SRAM cell structure and manufacturing method thereof

Image Number 13 for United States Patent #7157763.

A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

  Recently Added Patents
Carrier for developing electrostatic charge image, developer for developing electrostatic charge image, image forming apparatus, and image forming method
Tungsten barrier and seed for copper filled TSV
Lamp body with integrally molded heat sink
Pulsed plasma with low wafer temperature for ultra thin layer etches
Image forming apparatus detecting color patterns and generating interleaf images at predetermined position
Display device and method of repairing display device
Instance management of code in a database
  Randomly Featured Patents
Hot workability of age hardenable nickel base alloys
Circuit board for mounting multilayer chip capacitor and circuit board apparatus including the multilayer chip capacitor
Smoking jacket
Shape-adjustable mold, skin and interior-core structures for custom board production
Circular rotary engine
Method and assembly for coating a paper web
Horse feeder
Thiazolidinedione derivatives as hypoglycemic agents
Liquid crystal display including pixel electrode(s) designed to improve viewing characteristics