Resources Contact Us Home
SRAM cell structure and manufacturing method thereof

Image Number 13 for United States Patent #7157763.

A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

  Recently Added Patents
Image sensor with improved color crosstalk
Stack and folding-typed electrode assembly and method for preparation of the same
Pre-fetching map data using variable map tile radius
Method, system and program for securing redundancy in parallel computing system
Hot-press cushion material and manufacturing method of the same
Imidazole derivatives used as TAFIa inhibitors
LED lighting module
  Randomly Featured Patents
Specimen holder for microscopic examinations
Nickel-free white gold alloy compositions with reversible hardness characteristics
Breath actuated medicinal aerosol delivery apparatus
Method of agglomerating polytetrafluoroethylene powder
Child-resistant medication reminder
Extendable swivel antenna
SOI pass-gate disturb solution
Method for producing carboxyl-terminated polyisobutenes
Furniture stop
Method for identifying reduced binding between GMP-140 and GMP-140 ligand