Resources Contact Us Home
SRAM cell structure and manufacturing method thereof

Image Number 13 for United States Patent #7157763.

A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

  Recently Added Patents
Control device with adjusting pulse width modulation function and the backlight module thereof
Integrated bug tracking and testing
Enediyne compounds, conjugates thereof, and uses and methods therefor
Tree drain grate
Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties
Bulk vending apparatus, system and method
  Randomly Featured Patents
Brushless tachometer generator
Crosslinkable rubber compositions and uses thereof
Exchange and to the release of an amine from its carbamoyl fluoride
CMOS image sensor and method for fabricating the same
Battery separator employing zinc selective additive materials
Low jitter digital frequency synthesizer with frequency modulation capabilities
Method of roll nip load measurement
Optical recording medium
Low-cost fast variable optical attenuator for optical wavelength tracking
Mold for recapping a tire