Resources Contact Us Home
SRAM cell structure and manufacturing method thereof

Image Number 13 for United States Patent #7157763.

A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

  Recently Added Patents
Phosphonate compounds
Chain link
Capacitance sensing
Malicious attack detection and analysis
Pear tree named `PremP109`
Personal IP toll-free number
Turbulence sensor and blade condition sensor system
  Randomly Featured Patents
Spring insert for cushioning insert
Tubular device with carabiner thereon
Apparatus for producing a tube with successive corrugations of different radial extensions and spacings
Method of manufacturing platinum resistance thermometer
Buckle for a belt and the like
Releasable mounting system
Method and apparatus for enhancing security of wireless communications
Vehicular electronic control apparatus
Condensed indoline derivatives and their use as 5HT, in particular 5HT.sub.2C, receptor ligands
Oral pharmaceutical preparation embedded in an oily matrix and methods of making the same