Resources Contact Us Home
Semiconductor laser

Image Number 6 for United States Patent #7142576.

A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

  Recently Added Patents
Therapeutic human anti-IL-1R1 monoclonal antibody
Automatic fixup of network configuration on system image move
Method and assembly for determining the temperature of a test sensor
Providing a feedback loop in a low latency serial interconnect architecture
Wafer level packaging structure with large contact area and preparation method thereof
Transaction cost recovery queue management
Transmission apparatus and network protection method
  Randomly Featured Patents
Disc player combined with radio tuner and an amplifier
Perpendicular magnetic recording medium and manufacturing method thereof
Loading support device for cargo spaces in a means of transport, in particular for cargo spaces in aircrafts
Sand aggregating reagents, modified sands, and methods for making and using same
Non-jamming, fail safe flight control system with non-symmetric load alleviation capability
Plug-and socket connector
Tin oxide gas sensors
Squeegee device and system
Methods for controlling implantable satellite electrodes
Tension apparatus and tension system