Resources Contact Us Home
Semiconductor laser

Image Number 6 for United States Patent #7142576.

A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

  Recently Added Patents
Image decolorizing device
System, method and program recording medium for supply capacity estimation
Diaminocyclohexane compounds and uses thereof
Digital broadcast receiver and method for processing caption thereof
Process for preparing red cocoa ingredients, red chocolate, and food products
Extreme ultraviolet light source device and method for generating extreme ultraviolet light
Method for preparing a .beta.-SiAlON phosphor
  Randomly Featured Patents
Web motion converter
Method of forming driveshaft slip yoke fluid sealing plug
Cellulose/polyolefin composite pellet
Edge detection and seam tracking with EMATs
Planter and method of making same
Immersive remote conferencing
Obstruction eliminator
Adjusting arrangement for steerable transport assembly for self-propelled construction vehicle
System setup verification for peripheral devices
Personal computer docking station