Resources Contact Us Home
Semiconductor laser

Image Number 6 for United States Patent #7142576.

A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

  Recently Added Patents
Vacuum cleaner filter adapter ring
Heteroleptic iridium complexes as dopants
Ice data collection system
Communication system
Interference suppressing OFDM system for wireless communications
Device and method for adjusting a chrominance signal based on an edge strength
Brushless motor drive apparatus and drive method
  Randomly Featured Patents
Compressed gas cylinder cart with a fire and heat resistant barrier
Adjuvant for promoting absorption of pharmacologically active substances through the rectum
Tufting machine broken yarn detector
Late addition of PUFA in infant formula preparation process
System and method for controlling access point load
Head-to-head comparisons
Bracket for anchoring posts, wall panels or the like
System for detecting load on generator
Data processing system having a plurality of storage systems
Process for the removal of nitrogen compounds from various organic media