Resources Contact Us Home
Semiconductor laser

Image Number 6 for United States Patent #7142576.

A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

  Recently Added Patents
NMR, instrumentation, and flow meter/controller continuously detecting MR signals, from continuously flowing sample material
Process for preventing polymerization of cracked volatile products during pyrolysis and gasification
Method and system for phase-sensitive magnetic resonance imaging
Cantilevered probe detector with piezoelectric element
Medical injector
Surface modification
  Randomly Featured Patents
Process and device for monitoring the functioning of a liquid-liquid extraction column
Adapter for external connection and electronic apparatus
Gas bubble removal from ink-jet dispensing devices
Processes for preparing cholesterol lowering compounds
Method of high viscosity inking in rotary newspaper presses
Optical fiber transmission system, raman gain slope measuring device and raman gain slope measuring method
P-toluene sulfonic acid salt of 5-amino-3-(2'-O-acetyl-3'-deoxy-.beta.-D-ribofuranosyl)-3H-thiazole[4,5-d- ]pyrimidine-2-one and methods for preparation
Orthodontic appliance bracket and arch
Hydraulic pump drive
Test system connection system with triaxial cables