Resources Contact Us Home
Semiconductor laser

Image Number 6 for United States Patent #7142576.

A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

  Recently Added Patents
Power storage device and method for manufacturing the same
Method and system for leveraging the power of one's social-network in an online marketplace
Backlight assembly, method for driving backlight assembly, and liquid crystal display having the same
Collating device, collating method, and program
Light powered hearing aid
Droplet generation and detection device, and droplet control device
Vehicle speed verification system and method
  Randomly Featured Patents
Photographic polyester film base with subbing layer containing phosphoric acid derivative
Non-volatile semiconductor memory device
Methods for transmitting data in a mobile system and radio stations therefor
Wipe-off test device
Alpha-ray radiation source photographing device
Baby bottle with handles
Shower spray deflector unit
Fuel injection internal combustion engines
Epoxy terrazzo flooring and method for polishing the same
Apparatus and method for testing crossover voltage of differential signals