Resources Contact Us Home
Semiconductor laser

Image Number 6 for United States Patent #7142576.

A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

  Recently Added Patents
Adaptive take-off strips for smoothing ink consumption
Method of adenoviral vector synthesis
Switching device and electronic apparatus using the same
Methods and systems for distributing broadcast messages on various networks
Secure Flash-based memory system with fast wipe feature
Patterned birefringent product
  Randomly Featured Patents
Arousal level judging apparatus and method
Eyepiece cup for binoculars
Ribbon cutter apparatus and method for making sandwich baked goods
Latching solenoid energy reserve
Ready roots
Device for fixing a pyrolytic graphite grid onto the base of an electron tube
Solid-state imaging apparatus and control method with transmission control hold circuit
Double row cylindrical roller bearing
Compounds and related methods for mutant p53 reactivation
Process and apparatus for removing NO.sub.x from gas streams