Resources Contact Us Home
Method for manufacturing semiconductor device

Image Number 19 for United States Patent #7129121.

A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

  Recently Added Patents
Heat retaining device
Representations of compressed video
Vehicle front fender
Integrated circuits with magnetic core inductors and methods of fabrications thereof
Method of making a CIG target by spray forming
Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
Combination for composite layered chip package
  Randomly Featured Patents
Selective gelation polymer for profile control in CO.sub.2 flooding
Bitmapped graphics workstation
GaAs logic circuit with temperature compensation circuitry
Method and system for determining a tyre load during the running of a vehicle
Laminated structures made from recycled tires
Method of fabricating a semiconductor device
Arrangement for displaying multiplexed analog components on a conventional TV monitor
Heel strap apparatus and mounting method
Locking electrical outlet
Method of making a gun propellant composition