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Nonvolatile ferroelectric memory cell and memory device using the same

Image Number 11 for United States Patent #7126839.

A memory device using a nonvolatile ferroelectric memory cell stores processing results of various programs with a nonvolatile state in a nonvolatile ferroelectric register, and processes multiple data using a multi-port. In the memory device, various program processing results with a nonvolatile state are stored in a FeRAM register in a processing operation of a CPU (Central Processing Unit), thereby preventing destruction of the stored data even in a power-off mode. In addition, the multiple data are processed using a multi-port register, thereby improving reliability and operation speed.

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