Resources Contact Us Home
Method for fabricating a self-aligned bipolar transistor

Image Number 7 for United States Patent #7041564.

According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post which, in one exemplary embodiment, is situated between first and second link spacers. The bipolar transistor also comprises a conformal layer situated over the sacrificial post. The conformal layer may comprise silicon oxide, for example. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the sacrificial post, and the base. The sacrificial planarizing layer has a first thickness in a first region between the first and second link spacers and a second thickness in a second region outside of the first and second link spacers, where the second thickness is generally greater than the first thickness. Another embodiment is a method that achieves the above-described bipolar transistor.

  Recently Added Patents
Bull stationery tab
Image erasing apparatus and recording medium conveying method for image erasing apparatus
Real-time RSL monitoring in a web-based application
Note tab
Pressing mold for optical lenses and method for manufacturing glass optical lenses
Apparatus for performing timer management regarding a system timer scheduler service, and associated method
  Randomly Featured Patents
Shaped-charge liner
Sheath liquid supplying apparatus, sheath liquid supplying method, and evaluating method of sheath liquid supplying condition
Inflatable structure with suspended features
Optical semi-quantitative 100% filling check of pharmaceutical capsules on capsule-filling machines
Nozzle blade airfoil profile for a turbine
Forming mesh
Efficiency photo-gram with stand-up display
Digital adder-subtracter with tentative result correction circuit
Balanced dual output mixer circuit
Optical device for the processing of an optical wave, its fabrication method and a frequency doubler