Resources Contact Us Home
Method for fabricating a self-aligned bipolar transistor

Image Number 7 for United States Patent #7041564.

According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post which, in one exemplary embodiment, is situated between first and second link spacers. The bipolar transistor also comprises a conformal layer situated over the sacrificial post. The conformal layer may comprise silicon oxide, for example. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the sacrificial post, and the base. The sacrificial planarizing layer has a first thickness in a first region between the first and second link spacers and a second thickness in a second region outside of the first and second link spacers, where the second thickness is generally greater than the first thickness. Another embodiment is a method that achieves the above-described bipolar transistor.

  Recently Added Patents
Solid-state imaging device
Push to release cover for a portable electronic device
Wound dressings
Methods and compositions for wound healing
LED lamp including heat dissipator
Pandemic protocol for emergency dispatch
  Randomly Featured Patents
Flame protection gasket
Connector clip for verifying complete connection between a connector and a pipe
Enveloped pesticidal formulations
Glass-ceramic cooktop and method of assembling the same
Segment tester for a repeater interface controller
Method and apparatus for automated rapid immunohistochemistry
Communication device
Object views for relational data
Syrup bottle
Hose reel apparatus