Resources Contact Us Home
Dielectric separation type semiconductor device and method of manufacturing the same

Image Number 8 for United States Patent #6992363.

A dielectric separation type semiconductor device having high voltage withstanding capability includes a primary dielectric layer (3-1) on a first surface of a semiconductor substrate (1), a first conductivity type first semiconductor layer (2) disposed oppositely to the substrate (1) with the primary dielectric layer (3-1) sandwiched, a first conductivity type second semiconductor layer (4) on the first semiconductor layer (2), a second conductivity type third semiconductor layer (5) surrounding peripherally the first semiconductor layer (2), a ring-like insulation film (9) surrounding peripherally the third semiconductor layer (5), a first electrode (6) on the second semiconductor layer (4), a second electrode (7) on the third semiconductor layer (5), a back-surface electrode (8) deposited on a second surface of the substrate (1), and a first auxiliary dielectric layer (3-2) disposed immediately below the second semiconductor layer (4), being junctioned to the second surface.

  Recently Added Patents
Shoe bag
Electric vehicle charging station parking meter systems
Error scanning in flash memory
Image stabilization
Memory with separate read and write paths
Autonomous adaptation of transmit power
Snapshot isolation support for distributed query processing in a shared disk database cluster
  Randomly Featured Patents
Shaving razor cartridge
Music replay circuit
Modular safe deposit box assembly
Writing stylus
Combined leg and foot support
Valve-operating lever
Needleless method and apparatus for transferring liquid from a container to an injecting device without ambient air contamination
Pipeline architecture for maximum a posteriori (MAP) decoders
Liquid crystal display device and method of forming the same
Jamb frame extrusion