Resources Contact Us Home
Semiconductor device with capacitor formed around contact hole

Image Number 17 for United States Patent #6950168.

A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insulating films used in each circuit of an electro-optical device, typically an IPS method LCD, in particular for the surface of a common electrode formed on a resin film. The amount of formation of the extra anodic oxide film can be reduced by covering with an anodic oxide film, and a liquid crystal display device with high reliability and having an electrode with superior adhesion can be manufactured.

  Recently Added Patents
Pressure washer
Image forming apparatus, control method of image forming apparatus, and storage medium
Automatic detection of image degradation in enhanced vision systems
Limit switch
Communication apparatus, integrated circuit, and communication method
Pyroelectric detector, pyroelectric detection device, and electronic instrument
Incentive based recommendation method for mobile station content
  Randomly Featured Patents
Recording medium having recorded thereon coded information using plus and/or minus rounding of images
Model adaptive apparatus and model adaptive method, recording medium, and pattern recognition apparatus
Fourier transform optimized anisotropic filtering
Shielding device for protecting recreation areas
Preparation and doping of semiconducting forms of CuAlS.sub.2
Method and system in an electronic spreadsheet for persistently copy-pasting a source range of cells onto one or more destination ranges of cells
Analog to frequency converter with balancing compensation cycles
Oxide superconducting film manufacturing apparatus
Heat exchangers
Multi-speed transmission having three planetary gear sets