Resources Contact Us Home
Semiconductor device with capacitor formed around contact hole

Image Number 17 for United States Patent #6950168.

A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insulating films used in each circuit of an electro-optical device, typically an IPS method LCD, in particular for the surface of a common electrode formed on a resin film. The amount of formation of the extra anodic oxide film can be reduced by covering with an anodic oxide film, and a liquid crystal display device with high reliability and having an electrode with superior adhesion can be manufactured.

  Recently Added Patents
Combination immunotherapy for the treatment of cancer
Electromagnetic sensor cable and electrical configuration therefor
Enediyne compounds, conjugates thereof, and uses and methods therefor
Graphical user interface for interpreting the results of image analysis
Sperm factor sequences
Triazine ring-containing polymer and film-forming composition comprising same
Multi-state DC-DC converter having undirectional switches
  Randomly Featured Patents
Write strategy circuit, write strategy method, and optical disk apparatus
Ligation assembly and detection of polynucleotides on solid-support
Method of manufacturing a bonded semiconductor substrate and a dielectric isolated bipolar transistor
Clear glass composition
Vaccine against rabies and process for preparation thereof
Data networks
Modular patient support system
Apparatus for closing tubular wrappers
Printer and printing method
Bi-color light source for indicating status of information handling system