Resources Contact Us Home
Semiconductor device with capacitor formed around contact hole

Image Number 17 for United States Patent #6950168.

A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insulating films used in each circuit of an electro-optical device, typically an IPS method LCD, in particular for the surface of a common electrode formed on a resin film. The amount of formation of the extra anodic oxide film can be reduced by covering with an anodic oxide film, and a liquid crystal display device with high reliability and having an electrode with superior adhesion can be manufactured.

  Recently Added Patents
Data center management unit with improved disaster prevention and recovery
Web development environment that enables a developer to interact with run-time output presentation of a page
Electrode binder composition, electrode slurry, electrode, and electrical storage device
Method of manufacturing semiconductor device and semiconductor device
Plants and seeds of hybrid corn variety CH817100
Voltage generating system and memory device using the same
System and apparatus for control of published content
  Randomly Featured Patents
Conversion of alkyl phenyl ether to alkylphenol
High flux and selectivity SAPO-34 membranes for CO.sub.2/CH.sub.4separations
Method for using mold release
Twin clutch type speed change control system
Electronic poker game
Method of making absorbent pads
Register reservation method for fast context switching in microprocessors
Image processing apparatus restoring color image signals
Movable roof for a passenger vehicle
Method for controlling the working conditions in a processing machine of the staple fiber spinning plant and apparatus for implementing the method