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Plasma processing apparatus

Image Number 9 for United States Patent #6949165.

An electrical connection means 45 guides a DC voltage, which is generated in an ion sheath when a plasma is excited, to a first electrode 31 where a substrate W is placed. Hence, the DC voltage is applied to both the upper and lower surfaces of the substrate W, so the two surfaces of the substrate have the same potential. As a result, element breakdown, which occurs when a large potential difference occurs between the two surfaces of the substrate W, can be prevented.

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