Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Heterojunction bipolar transistor and method of producing the same










Image Number 7 for United States Patent #6924201.

A heterojunction bipolar transistor of the present invention is produced from a wafer including a substrate and a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of the first conductivity type sequentially laminated on the substrate in this order. First, the wafer is etched up to a preselected depth of the collector layer via a first photoresist, which is formed at a preselected position on the emitter layer, serving as a mask. Subsequently, the collector layer etched with at least the sidewalls of the base layer and collector layer, which are exposed by the first etching step, and a second photoresist covering part of the surface of the collector layer contiguous with the sidewalls serving as a mask.








 
 
  Recently Added Patents
Method of monitoring and configuring
Communication apparatus, communication method, and program for exchanging data with a target
Instance management of code in a database
Wristwatch
Acceleration based mode switch
Data processor with virtual machine management
Creating three dimensional graphics data
  Randomly Featured Patents
Method and apparatus for transmitting driving power in drafting device of spinning frame
Pinching deactivator for automobile electric switches
Ceiling fan arm blades unit
Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
Optical rotary joint with high return loss
Integrated power devices and signal isolation structure
Novel nitrosourea derivatives
Disk valve with improved disk mounting
Hair spray resin composition
Die attach using gold ribbon with gold/silicon eutectic alloy cladding