Resources Contact Us Home
Heterojunction bipolar transistor and method of producing the same

Image Number 7 for United States Patent #6924201.

A heterojunction bipolar transistor of the present invention is produced from a wafer including a substrate and a collector layer of a first conductivity type, a base layer of a second conductivity type and an emitter layer of the first conductivity type sequentially laminated on the substrate in this order. First, the wafer is etched up to a preselected depth of the collector layer via a first photoresist, which is formed at a preselected position on the emitter layer, serving as a mask. Subsequently, the collector layer etched with at least the sidewalls of the base layer and collector layer, which are exposed by the first etching step, and a second photoresist covering part of the surface of the collector layer contiguous with the sidewalls serving as a mask.

  Recently Added Patents
Tag-based apparatus and methods for neural networks
Topology discovery, control channel establishment, and datapath provisioning within an aggregation network with centralized control
Load balancing for parallel tasks
High-performance AHCI interface
System for controlled release of an active principle and method for preparation
Split-ring resonator creating a photonic metamaterial
Mobile terminal and controlling method thereof
  Randomly Featured Patents
Network service processing method and system
Rapid deploy hazmat containment device
Process for producing alkylbenzenes using a catalyst based on a dealuminized Y zeolite and a catalyst based on a dealuminized mordenite
Tampon with wound pledget in the shape of a bell
Toilet bowl
Data-object-related-request routing in a dynamic, distributed data-storage system
Non-classical topical treatment for glaucoma
Enhanced two-phase commit protocol
Device and method for capturing an image of a human face
Hybrid front tracking algorithm for solving single phase fluid equations with a moving boundary on a quadrilateral grid