Resources Contact Us Home
Semiconductor device

Image Number 5 for United States Patent #6903418.

A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift region on drain layer, drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (the peripheral region of the semiconductor chip) on drain layer and around drain drift region, breakdown withstanding region providing substantially no current path in the ON-state of the MOSFET, breakdown withstanding region being depleted in the OFF-state of the MOSFET, breakdown withstanding region including a second alternating conductivity type layer, and an under region below a gate pad, and the under region including a third alternating conductivity type layer.

  Recently Added Patents
Transmission device
Noise spectrum tracking in noisy acoustical signals
Arcuate motion control in electrostatic actuators
Over the counter medicinal container with surface ornamentation
Systems and methods for analyzing telecommunications invoices for payment
Method for counting and segmenting viral particles in an image
  Randomly Featured Patents
Decorative bottle accessory
Lighted tool holder
Method and apparatus for post-weld heat treating a tank
Application of crossed teflon diffuser to coatings on oriented surfaces
Apparatus and methods for improving parallel conduction in a quantum well device
Methods, systems, and computer program products for automatic group ordering of food from restaurants
Tree holder
Bumper for automobiles
Method and apparatus for reducing a nitrogen oxide, and control thereof