Resources Contact Us Home

Image Number 5 for United States Patent #6903363.

The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 .mu.m or more but 2 .mu.m or less.

  Recently Added Patents
System, apparatus and method for enabling/disabling display data channel access to enable/disable high-bandwidth digital content protection
Method of interfacing a host operating through a logical address space with a direct file storage medium
Display unit and display method
Security authentication method, apparatus, and system
Delay lines, amplifier systems, transconductance compensating systems and methods of compensating
Compositions of quaternary ammonium compounds containing bioavailability enhancers
Wafer level packaging structure with large contact area and preparation method thereof
  Randomly Featured Patents
Method and/or circuit for binary arithmetic decoding decisions before termination
Medical bandaging product
Viscous fluid bodily waste management article
Method of controlling structure stability of collagen fibers produced form solutions or dispersions treated with sodium hydroxide for infectious agent deactivation
Filtering container for fryer
Fluorinated acrylic monomers containing urethane groups and their polymers
Process for preparing iodinated aromatic compounds
Coating method for use in the production of magnetic recording medium
Mid infrared and near infrared light upconverter using self-assembled quantum dots
Asymmetrical random access memory cell, memory comprising asymmetrical memory cells and method to operate such a memory