Resources Contact Us Home
Method of manufacturing a semiconductor device

Image Number 16 for United States Patent #6893503.

A method of producing a semiconductor device which removes catalyst elements from a silicon-containing semiconductor film while maintaining the advantage of low temperature process is provided. The method comprises the steps of: forming an amorphous semiconductor film containing silicon on a glass substrate to crystallize it by using a catalyst element; selectively introducing into the amorphous semiconductor film an impurity belonging to Group 15 to form gettering regions and regions to be gettered; and causing the catalyst element in the silicon film to move to the gettering regions by heat treatment. Through the gettering process, the crystalline silicon film can be obtained in which the concentration of nickel contained therein is sufficiently reduced.

  Recently Added Patents
Polymeric compositions including their uses and methods of production
Method of operating an election ballot printing system
Entropy encoding and decoding using direct level and run-length/level context-adaptive arithmetic coding/decoding modes
Head shield
Spacers for insulated glass units
Mobile camera localization using depth maps
Apparatus for transmitting and receiving data in a wireless communication system and method thereof
  Randomly Featured Patents
Combination dispenser and applicator for dental floss
Processes for preparing polyethylene catalysts by heating catalyst precursors
Paper cutter
Microprogram controller including leading microinstruction from a generator executed while succeeding microinstruction from memory is read out
Light modulation circuit
Memory processing systems for well tools
Method and apparatus for burning-in semiconductor devices in wafer form
Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
Microscope with adjustable optical element
Method and system for controlling a power distribution system