Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Selective polysilicon stud growth










Image Number 6 for United States Patent #6861691.

A memory cell includes a bit line contact feature that is characterized by a contact hole bounded by insulating side walls including first and second pairs of opposing insulating side walls. The first pair of opposing insulating side walls comprises respective layers of insulating spacer material formed over a conductive line. The second pair of opposing insulating side walls comprises respective layers of insulating material formed between respective contact holes. The contact hole is filled to an uppermost extent of the insulating side walls with a conductively doped polysilicon plug defining a substantially convex upper plug surface profile. The contact hole may define either a bitline contact or a storage node contact.








 
 
  Recently Added Patents
Reception system including a mechanism countering pulsed interference
Optical multiplexer/demultiplexer
Apparatus for generating electrical energy from rocking activated energy
Power or voltage oscillation damping in a power transmission system
Compositions and processes for forming photovoltaic devices
Footwear
Projection-type video-image display apparatus
  Randomly Featured Patents
Sustainable outdoor lighting system
Nail polish bottle
Tracking multielectrode electroglottograph
Stove
Method and system for secure exchange and use of electronic business cards
Control method for detecting change points in motion picture images and for stopping reproduction thereof and control system for monitoring picture images utilizing the same
Semi-conducting oligomers and method relating thereto
Apparatus for the detection of contaminants in an elongated textile product
Antifreezing agent
Single Paddle having a semiconductor device and a passive electronic component