Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Selective polysilicon stud growth










Image Number 6 for United States Patent #6861691.

A memory cell includes a bit line contact feature that is characterized by a contact hole bounded by insulating side walls including first and second pairs of opposing insulating side walls. The first pair of opposing insulating side walls comprises respective layers of insulating spacer material formed over a conductive line. The second pair of opposing insulating side walls comprises respective layers of insulating material formed between respective contact holes. The contact hole is filled to an uppermost extent of the insulating side walls with a conductively doped polysilicon plug defining a substantially convex upper plug surface profile. The contact hole may define either a bitline contact or a storage node contact.








 
 
  Recently Added Patents
Image processing apparatus, image display apparatus, and image processing method
Integrated circuit package system with bonding lands
System and method for agitation of multiple specimen containers
Method and system for evaluating/analyzing patent portfolio using patent priority approach
Microporous membranes and methods for producing and using such membranes
Nano-pigment inkjet ink composition that has a low odor and is environmentally-friendly
Solar cell with hyperpolarizable absorber
  Randomly Featured Patents
Dipeptidyl peptidase inhibitors
Coated papers having improved labelling properties
Ultraviolet radiation absorbing naphthalenylidene compositions
Fluorescent proteins
Damper assembly for mobile bed scrubber
Manual valve actuator with cam
Methods and reagents for cyanide-free determination of hemoglobin and leukocytes in whole blood
Fuel control system for gaseous fueled engines
Pressure relief valve with filter
Systems and methods used for publishing and aggregating real world and online purchases via standardized product information