Resources Contact Us Home
Fabrication of abrupt ultra-shallow junctions

Image Number 6 for United States Patent #6852603.

One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.

  Recently Added Patents
Data security for dynamic random access memory using body bias to clear data at power-up
Method for generating codewords
Integrated circuit packaging system with heat slug and method of manufacture thereof
Tab visibility
Sensor controller, navigation device, and sensor control method
Method and system for Bluetooth low power link layer connection setup
System and method for managing content on a network interface
  Randomly Featured Patents
Channel allocation method used for mobile type communication devices
Arrangement for simultaneously heating a plurality of comestible items
Dual-port memory array using shared write drivers and read sense amplifiers
Trailer front scuff band
Argyranthemum plant named `Supacrest`
Decorative lamp-tree
Reversible geling co-polymer and method of making
Device for applying or removing support stockings
Method for the production of optical layers having uniform layer thickness