Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Fabrication of abrupt ultra-shallow junctions










Image Number 6 for United States Patent #6852603.

One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.








 
 
  Recently Added Patents
Computerized on-board system for controlling a train
Wavelength and power scalable waveguiding-based infrared laser system
Battery pouch sheet edge insulation
Generating a funding and investment strategy associated with an underfunded pension plan
Data recording apparatus with recording control based on defect block and control method thereof
Wireless subscriber managing storage of HARQ packets
High performance actuator motor
  Randomly Featured Patents
Microminiature coaxial connector which locks by snap-fastening
Method and apparatus for controlling an inverter
High speed feeder
Metering cell
Electronic still camera with dark current minimized in produced video signal
Developing apparatus
Blowgun
Automotive anti-skid brake control system with sampling input time data of wheel speed sensor signals
Pressure modulating valves for braking systems
Method and apparatus for detecting arrhythmias in a subcutaneous medical device