Resources Contact Us Home
Fabrication of abrupt ultra-shallow junctions

Image Number 6 for United States Patent #6852603.

One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.

  Recently Added Patents
Code conversion apparatus, code conversion method, and computer product
Adaptive period network session reservation
Electrophotographic photoreceptor and image forming apparatus including the same
Data center management unit with improved disaster prevention and recovery
Performance monitoring of advanced process control systems
Mobile communication device monitoring systems and methods
Non-volatile memory cell containing a nano-rail electrode
  Randomly Featured Patents
Identification devices and methods for producing the identification devices
Semiconductor memory device and a method for arranging signal lines thereof
Animal food and method
Garden hose booster water pump system
Displaying signals of a design block emulated in hardware co-simulation
Standards for determining glycosylated hemoglobin
Hand and shoe monitor using air ionization probes
Partitioned scan-testing system
Storage battery plate and manufacturing process therefor
Benzylpiperazine derivatives as motilin receptor agonists