Resources Contact Us Home
Fabrication of abrupt ultra-shallow junctions

Image Number 6 for United States Patent #6852603.

One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.

  Recently Added Patents
Method and apparatus for optimizing transmission diversity
Image processing system, image processing method and program for image processing
System and method for multi-threaded OFDM channel equalizer
Method and system for selecting a target with respect to a behavior in a population of communicating entities
Buckle (tube)
Optimized control of an energy supplying system and an energy consuming system
Error scanning in flash memory
  Randomly Featured Patents
User activated fountain display
Fabric reinforced rubber product having molded isolator bushings
Optical disc addressing devices a method of use thereof
LED lamps and LED driver circuits for the same
Form separator
Removable interlockable first and second connectors having engaging flexible members and process of making same
Multiplexed analysis of clinical specimens apparatus and method
System, method and software for cognitive automation
Drive circuit for MEMS device and method of operation thereof
Building block toy set