Resources Contact Us Home
Insitu post atomic layer deposition destruction of active species

Image Number 7 for United States Patent #6844260.

Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.

  Recently Added Patents
Snap-engagement structure
Warm air generating apparatus, sheet feeding apparatus, and image forming apparatus including warm air generating apparatus and sheet feeding apparatus
Image correction method
Breathing mask
Method for identifying bacteria in a sample
Negative electrode material for non-aqueous electrolyte secondary battery, method for manufacturing negative electrode material for non-aqueous electrolyte secondary battery, non-aqueous elect
Equipment to facilitate money transfers into bank accounts
  Randomly Featured Patents
Inkjet printhead with integral nozzle plate
Washing machine
Method and apparatus for "just-in-time" dynamic loading and unloading of computer software libraries
Orthopaedic bone plate
Vehicle drive support device
Method of manufacturing a surface-emitting laser
Self-assembly water heater enclosure and kit
Method of forming a tungsten plug of a semiconductor device
Keyboard connecting mechanism capable of assembling a keyboard conveniently
Web site screen rotation