Resources Contact Us Home
Insitu post atomic layer deposition destruction of active species

Image Number 7 for United States Patent #6844260.

Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.

  Recently Added Patents
High-performance AHCI interface
Synergistic fungicidal interactions of 5-fluorocytosine and other fungicides
Modified binding proteins inhibiting the VEGF-A receptor interaction
Semiconductor integrated circuit
Digital microwave radio link with adaptive data rate
Information display
Signal routing dependent on a loading indicator of a mobile node
  Randomly Featured Patents
Zero mask high density metal/insulator/metal capacitor
Pivot connection for slip joint pliers
Hydrostatic propulsion system
Device for the desynchronization of neuronal brain activity
Hanging file folder assembly apparatus and method
Fixing device for releasably fastening a tool member to a fixing plate in an injection molding machine
Liquid crystal composition
Voltage supply circuit for voltage-dependent capacitor diode tuning
Method to determine a channel characteristic, and discrete wavelet transmitter and receiver to perform the method
Pyrene derivative, light emitting element, and light emitting device