Resources Contact Us Home
Method of manufacturing a semiconductor device

Image Number 10 for United States Patent #6825072.

In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.

  Recently Added Patents
Systems and methods for building axes, co-axes and paleo-geographic coordinates related to a stratified geological volume
Dimmer system and damper circuit thereof
Event-triggered server-side macros
Efficient implementation of hash algorithm on a processor
Sensor controller, navigation device, and sensor control method
Medical diagnosis, therapy, and prognosis system for invoked events and methods thereof
Surface-emitting laser light source using two-dimensional photonic crystal
  Randomly Featured Patents
Composite semipermeable membrane, and production process thereof
Lamp socket for a Christmas tree light
Low profile fitting detecting connector
Gas analyzer cuvettes
Drum for stripping or pre-treating trees or like plants
Relative position and/or posture measuring system for measuring relative positions and/or relative postures using a magnetic field generator and a magnetic field detector
Sonar dome
Practical implementation of a CT cone beam algorithm for 3-D image reconstruction as applied to nondestructive inspection of baggage, live laboratory animal and any solid materials
Spring loaded recessed lighting fixture thermal protection