Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing a semiconductor device










Image Number 10 for United States Patent #6825072.

In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.








 
 
  Recently Added Patents
Methods and compositions for inhibiting progression to chronic cardiac failure
Compatibility check
Method for distributing advertisements to client devices using an obscured ad monitoring function
Method for fabrication of a semiconductor device and structure
Recording medium, playback device, integrated circuit
Systems and methods for economic retirement analysis
Deposited conductive layers for leads of implantable electric stimulation systems and methods of making and using
  Randomly Featured Patents
Query classification based on query click logs
Durable medium-density fibre cement composite
Approach for identifying a subset of asynchronous transfer mode (ATM) VPI/VCI values in the complete VPI/VCI range
Method of measuring coefficient of dynamic friction between golf ball and collisional plate
Radiation-sensitive mixture
Endosseous implant
Transportable refrigerant transfer unit and methods of using the same
Adjustable laptop holder for exercise equipment
Self diagnostic armor structure
Compositions for reducing abnormal stimulation of endothelin receptors and novel compounds