Resources Contact Us Home
Method of manufacturing a semiconductor device

Image Number 10 for United States Patent #6825072.

In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.

  Recently Added Patents
Fuser member having composite outer layer
Late loading rich media
System and method for deposition in high aspect ratio magnetic writer heads
Capacity and coverage self-optimization method and device in a mobile network
Business card assembly
Scale information for drawing annotations
Flash drive
  Randomly Featured Patents
Blade protector with cutting chain image for chain saw
Method of hydrodesulfurizing catalytic cracked gasoline
Supplemental magnet strip for toner cartridge developer roll magnet and method for employing the same
Dispersive precompensator for use in an electromagnetic radiation generation and detection system
Gas assisted injection molding
Service-based network access
Piezoelectric resonator with improved suspension
Process for the conversion of natural gas to acetylene and liquid fuels with externally derived hydrogen
Apparatus for venting a pressurized bubble contactor
FAIMS apparatus having plural ion inlets and method therefore