Resources Contact Us Home
Method of manufacturing a semiconductor device

Image Number 10 for United States Patent #6825072.

In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.

  Recently Added Patents
Electronic system auto-mute control circuit and control method thereof
Method and apparatus for soft information transfer between constituent processor circuits in a soft-value processing apparatus
Computer program and apparatus for evaluating signal propagation delays
Electric train drive control device
System for programming domestic appliances and method for programming assembly-line programmable domestic appliances
Identification wristband
Quantifying the risks of applications for mobile devices
  Randomly Featured Patents
Sinusoidal signal multiplier circuit
Hydrogen peroxide destroying compositions and methods of making and using same
Winder for mechanical watches
Retractable lighting assembly
Gas drying apparatus and method
Launching device for a flying toy
Process for the manufacture of 3-hydroxy-2-cycloalken-1-one derivatives
Upright appliance handle
A cap
Flowmeters and methods for diagnosis of sensor units