Resources Contact Us Home
Method of manufacturing a semiconductor device

Image Number 10 for United States Patent #6825072.

In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.

  Recently Added Patents
Vehicle, toy, and/or replicas thereof
Method and apparatus for networked modems
Interconnect, bus system with interconnect and bus system operating method
Server providing pseudo print preview and final regular preview to device
Apparatus for counting particles in a gas
Sending targeted product offerings based on personal information
Using storage cells to perform computation
  Randomly Featured Patents
Molding apparatus having elements made of composite material
Stable liquid detergent suspensions
Combination golf bag and golf bag cover and associated method
Method for improving faceting effect in dual damascene process
Parallel-flow coriolis-type mass flowmeter with flow-dividing manifold
Carboxylic acid compounds and medicinal compositions containing the same as the active ingredient
Ultra high throughput sampling and analysis systems and methods
Process for preparing oxygen-containing organic compounds
Method for fabricating a thin film transistor with the source, drain and channel in a groove in a divided gate