Resources Contact Us Home
Method of manufacturing a semiconductor device

Image Number 10 for United States Patent #6825072.

In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.

  Recently Added Patents
XDSL system and signal transmission method, sending device, and receiving device of xDSL system
Method and apparatus for controlling cardiac resynchronization therapy using cardiac impedance
Tetrazolyl oxime derivative, salt thereof, and plant disease control agent
Watch chain
Composite filtration membranes and methods of preparation thereof
Scalable architecture for rank order filtering
Method and apparatus for displaying system status with a wide range of viewing angle
  Randomly Featured Patents
Illumination apparatus and exposure apparatus
Sensor platform for use in machines for washing articles
Semiconductor device and method for manufacturing the same
Method and apparatus for observing specimen image on scanning charged-particle beam instrument
Method and apparatus for simultaneous matching of displaced image blocks to a reference
Implant for artificial teeth
Deck plank
Plastic siding panels with outdoor weatherable embossed surfaces
Systems and methods for automated phone conversation analysis