Resources Contact Us Home
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

  Recently Added Patents
Wristband with detachable labels
Isolation rings for blocking the interface between package components and the respective molding compound
Reusing data in user run book automation
Luggage cart
Target trading system and method
Detection system and method for mobile device application
  Randomly Featured Patents
Transmit diversity in a wireless communication system
Memory management system and method
Multi-section boat sail
Process for producing a composite using potassium hexatitanate whiskers having a tunnel structure
Self-servo-write using ramp-tracks
Fluid economizer control valve system for blowout preventers
Method for verifying anti-scrambling efficiency of a communication system
Electron energy recovery system for negative ion sources
Method and apparatus for dynamic assignment of network interface card resources