Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Database caching utilizing asynchronous log-based replication
Method of generating integrated circuit model
Avalanche photo diode and method of manufacturing the same
Egg separator
Glycosyltransferase promoter
Chair structure
Cooling structure for electronic device
  Randomly Featured Patents
Automatic coupling of an alternating current power source and an inductive power apparatus to charge a target device battery
Lockable media storage box with lock and key
Thin projector
Articles made from blends made from propylene ethylene polymers
Message transfer method and apparatus
Electrical connector
Method for coronary artery bypass
Method of converting motor car
Natural language labeling of video using multiple words
Conveyor conversion kit for replacing rollers within conveyor system and method