Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Liquid low temperature injection molding process
Soybean cultivar BY0811143
Electrode composition with enhanced performance characteristics
Flexible quantization
Video recording and playing apparatus and its control method
Maize hybrid X08B748
Coupling device having piercing member
  Randomly Featured Patents
Light pipe for low profile optical navigation systems
Dioxolane substituted anilids
Shade determination apparatus and method for specifying and determining colors for teeth and dental restorations
Footwear sole
Method and apparatus utilizing agar diffusion technique for determining quantitative drug concentration parameter
Protective glazing laminate
Flexible boot for constant velocity universal joint
Image forming apparatus
Triazine derivatives
System and method for data mining and security policy management