Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Method for mapping resource units
Products for animal use including humans having a certificate verifying at least one of efficacy or safety, and methods of providing such certificates
Case for electronic device
Double patterning method using tilt-angle deposition
Novelty snacks and method of manufacture of same
Liquid-filled protein-phosphatidic acid capsule dispersions
Image processing apparatus, method, and storage medium for performing soft proof processing
  Randomly Featured Patents
Peptide process for preparation thereof and use thereof
Clamping of battery plate block assemblies
Filtering dispenser container
Heat exchanger
Subbing composition for polyester
Photographically useful compounds
Actuating system for a variable area exhaust nozzle
Agile receiver for a scanning laser radar
Ignition apparatus having increased leakage to charge ion sense system
Artificial intelligence for wireless network analysis