Resources Contact Us Home
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

  Recently Added Patents
Method and apparatus for distributing promotional materials
Method for fabricating a nitrided silicon-oxide gate dielectric
Process for the preparation of protected L-alanine derivatives
Dental plier
Charge pump circuit and power-supply method for dynamically adjusting output voltage
Optical splitter device
Method of manufacturing acrylic film, and acrylic film
  Randomly Featured Patents
Umbrella assembly
Hydraulic lift perfected for the lifting and the handling of heavy loads of several tons
Hydroxamates as therapeutic agents
Single-use electronic apparatus having a thermal switch
Apparatus for communications
Phase conjugate relative position sensor
Device with converged functionality
Invertible magnetic stand for test tubes
High resonance adjustable mirror mount