Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer Image Number 11 for United States Patent #6815801. The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.       Recently Added Patents Ribonucleic acid interference molecules Television receiver Antenna device Pouch type battery Cogeneration apparatus case venting system Heat dissipating structure and portable phone Active-active hierarchical key servers   Randomly Featured Patents Interactive parameter driven iterative financial spreadsheet analysis with context and layout sensitive help screen Engine with built-in continuously variable transmission Heat exchanger unit with support ring and radial brackets Transition metal complexes of n, n',n"trialkyl-cis-1,3,5-triaminocyclohexane and related compositions and methods of synthesis and use Materials and methods for making improved micelle compositions Apparatus and method for simultaneous multiple telephone type services on a single telephone line Batter applicator with adjustable tilt control for submerger or coating mechanism High density polyethylene compositions Bi-directional clutch type chain pulling device for rolling doors Programmable pin impedance reduction on multistandard input/outputs © 2006-2008 PatentGenius. All Rights Reserved.