Resources Contact Us Home
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

  Recently Added Patents
Modular authoring and visualization of rules using trees
Handheld electronic device with text disambiguation employing advanced editing feature
Method for delivering a volatile material
Methods and apparatus for preserving privacy in an RFID system
Visual indicator of online backup
Pressure roller and fixing device equipped with the same
  Randomly Featured Patents
Spice grinder
Method and apparatus for elemental analysis of a fluid downhole
Method and apparatus for processing an analogue signal
Elevating device
Semiconductor package and method for manufacturing the same
Self-locking flanged cap
Insulated deck structure
Planetary-type of gear and procedure and apparatus for its production
Method for reducing resistance at interface of single crystal silicon and deposited silicon
Apparatus for orthophonic diagnosis and reeducation