Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Bioactive agent-loaded heart-targeting nanoparticles
Personalized dashboard architecture for displaying data display applications
Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
Downlink scheduling in fractional frequency reuse (FFR) systems
Semiconductor unit having a power semiconductor and semiconductor apparatus using the same
Configurable caged ball insert for a downhole tool
Portable, single member housing cord protector
  Randomly Featured Patents
Apparatus for physical measurements of the eye
Beach cleaner
Side tooth mold
Arc welding apparatus
Method of operating gas turbines with reformed fuel
Flexible printed circuit connector
Wire guide apparatus
Knowledge archival and recollection systems and methods
Device for manufacturing a lateral bore in a tubular bone
Surface cleaning apparatus and method