Resources Contact Us Home
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Image Number 11 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

  Recently Added Patents
Process for the production of electric energy by the excitation and capture of electrons from ground or water sources
Method and system for remotely testing a wireless device
System and method for hybrid risk modeling of turbomachinery
Pelvic registration device for medical navigation
Autonomous primary-mirror synchronized reset
Soybean variety XB51J12
Tracking data eye operating margin for steady state adaptation
  Randomly Featured Patents
Television-telephone apparatus having a message-keeping function and an automatic response transmission function
Information storage medium and information recording/playback system
Mounting device for a flat screen display panel
Integrated circuit with signal bus formed by cell abutment of logic cells
Decoupling capacitor for leadless surface mounted chip carrier
Wildlife guard for electrical insulator bushings
Device for reducing fibrous products
Latency enhancements for multicast traffic over spatial reuse protocol (SRP)
Sample analysis apparatus and analysis method
Fiber service blocker