Resources Contact Us Home
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

  Recently Added Patents
Methods, systems and devices for packet watermarking and efficient provisioning of bandwidth
Light emitting apparatus with an opening part, manufacturing method thereof, and light unit
Behavior monitoring and compliance for multi-tenant resources
Code generating apparatus, reference signal generating apparatus, and methods thereof
Coordination of event logging operations and log management
Method for treating early severe diffuse acute respiratory distress syndrome
Task management in a workforce environment using an acoustic map constructed from aggregated audio
  Randomly Featured Patents
Method of treating disease
Method for process control of mechanical embossing
Method of forming a foamed thermoplastic polymer and wood fiber profile and member
Apparatus and system for identification labeling
Apparatus to service gas meters
Drilling apparatus and cutter
Lubricant supplying unit, process unit incorporating same, image forming apparatus incorporating same, and method of manufacturing same
Sector scan computer
Method and apparatus for a controlled transition rate driver
Vehicle mirror system with light piping element