Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Semiconductor light-receiving device
Image forming apparatus with static elimination
Vehicle control system
Automatic adjustment of devices in a home entertainment system
Method for detecting security error in mobile telecommunications system and device of mobile telecommunications
Automatic misalignment balancing scheme for multi-patterning technology
Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
  Randomly Featured Patents
Electrical outlet box with polygonal mounting bore
Alumina compositions
Both-sided image forming method
Thickened acidic liquid composition with amine FWA useful as a bleaching agent vehicle
Power boat hull
Light emitting device, plasma display panel, and plasma display device
Mill rod puller
Device for determining the passability of a vehicle
Style guide and formatting methods for pilot quick reference handbooks
Photoirradiation type heat treatment apparatus