Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Policy based cryptographic application programming interface in secure memory
Methods and apparatus for power amplifier calibration
Method of inspecting wafer
Luminaire
Author signatures for legal purposes
Trash bag retention device
Signal judgment method, signal judgment apparatus, program, and signal judgment system
  Randomly Featured Patents
Photovoltaic cells
Fluid-collecting receptacle having hinged mat
Continuously variable transmission apparatus
Collapsible receptacle with prefabricated lift loops and method of making
Lighter
Structure and method for manufacturing asymmetric devices
Method for determining a profile quality grade of an inspected feature
Mobile communication system, base station, terminal device, and transmission control method
Topic relevance
Text enhancement for color and gray-scale documents