Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Method of optimizing air mover performance characteristics to minimize temperature variations in a computing system enclosure
Method for eliciting an immune response to human telomerase reverse transcriptase
Semiconductor device
Group of amino substituted benzoyl derivatives and their preparation and their use
Diameter signaling for mobile IPv4
Call admission control method and system
Methods and system for providing drug pricing information from multiple pharmacy benefit managers (PBMs)
  Randomly Featured Patents
Self-contained distillation apparatus
Bath for use with a bed for the sick
Method of introducing reaction mixtures for single-component foams into pressure containers
Air compressor assembly
Nonlinear optical article for modulating polarized light
Azaborolyl group 4 metal complexes, catalysts and olefin polymerization process
Shipping carton and method for shipping floral groupings
Providing features to a subscriber in a telecommunications network
Method for fabricating a radio frequency power MOSFET device having improved performance characteristics
Medical dilator system or dilator device