Resources Contact Us Home
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

  Recently Added Patents
Case for electronic device
Method for preparing a .beta.-SiAlON phosphor
Systems and methods for unchoked control of gas turbine fuel gas control valves
Multi-channel memory system including error correction decoder architecture with efficient area utilization
Method and system for coordinating client and host security modules
System for presenting media services
Verifiable service policy implementation for intermediate networking devices
  Randomly Featured Patents
Active head restraint system with lumbar support for vehicle seats
Structure of copper conductor and method of forming same
Process for the preparation of 9, 10-dihydro-9-OXA-10-organyloxyphosphaphenanthrene-10-oxide or -thione and derivatives of the same substituted on the phenyl groups
Periosteal distraction
Prefabricated modular storage building
Communication system providing automatic identification of calling parties
Carrying case
Emulsifier-free finely disperse systems of the water-in-oil type
Above-the-floor adaptor for upright vacuum cleaners