Resources Contact Us Home
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

  Recently Added Patents
Method and system for determining an optimal missile intercept approach direction for correct remote sensor-to-seeker handover
5-HT.sub.3 receptor modulators, methods of making, and use thereof
Generating a funding and investment strategy associated with an underfunded pension plan
Push button
Auto-aligning spectroscopy system
Mass spectrometry device and method using ion-molecule reaction ionization
Process for making thermoplastic polymer pellets
  Randomly Featured Patents
System and method for suppressing silence data in a network environment
Method for detecting unexposed regions
Synthetic polymeric fibrids, fibrid products and process for their production
Leaf collector
Image display apparatus
Storage tank and method of making a storage tank
Binding of pathological forms of prion proteins
Personal hydrofoil water craft
Apparatus and method for cleaning a transfer device of an image forming apparatus
Apparatus for recording with writing fluids and drop projection means therefor