Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Method and apparatus for optimizing paging in a communication network
Inductance element
Liquid crystal display device with a control mechanism for eliminating images
Image-monitoring method for electroporation treatment and as associated image-monitoring appliance
Particle-loaded membrane for solid-phase-extraction and method for performing SALDI-MS analysis of an analyte
Device for maneuvering a vehicle using maneuvering moves using at least one trajectory
Transferring data by touch between touch-screen devices
  Randomly Featured Patents
Driving an electronic instrument
System and method for transmitting and receiving variable length authorization control for digital services
Gate latch
Pet-play apparatus configured for interactive and solo use
Process for the hydroformylation of allylic esters using a cobalt catalyst
Method for capturing stretched fabrics in carrier frames
Method and system for creating self-assembling components
Vacuum cleaner
Method for separating monolithically produced laser diodes
Liquid-gas ejector