Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer










Image Number 10 for United States Patent #6815801.

The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.








 
 
  Recently Added Patents
Generating wiki pages from content and transformation objects
Enhancing user experiences using aggregated device usage data
Input device with photodetector pairs
Means to securely fixate pacing leads and/or sensors in vessels
Methods and systems for providing a business repository
Methods of diagnosing a plasmodium infection
Arrays of optical confinements and uses thereof
  Randomly Featured Patents
Wax-containing materials
Chrysanthemum plant
Player-centric method and apparatus for creating, distributing, and consuming content
Spacer for optical fiber cable and polyethylene resin composition therefor
Pulsating fluid spray device
Method of identifying inhibitors of EBNA-1
Speed-locked loop to provide speed information based on die operating conditions
Mouthrinse compositions
Plastics material mesh structure
Method of controlling an electrohydraulic braking apparatus for an aircraft wheel set, and an apparatus for implementing said method