Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Flash memory having improved core field isolation in select gate regions










Image Number 4 for United States Patent #6815292.

A flash memory array having improved core field isolation in select gate regions via shallow trench isolation and field isolation implant after liner oxidation is disclosed. The flash memory array includes a core area and a periphery area, wherein the core area further includes a select gate region. The method of fabricating the flash memory array begins by patterning a layer of nitride over a substrate in active device locations. After the nitride is patterned, a silicon trench etch is performed to form trenches. After forming the trenches, a layer of liner oxide is grown in the trenches. Then, a field implant is performed in both the core area and periphery area to provide field isolation regions for the flash memory array with. Thereafter, poly1 is patterned in the core area to form floating gate and select word-lines.








 
 
  Recently Added Patents
Portable, single member housing cord protector
Image sensor with improved color crosstalk
System and method for advertising messages on distributed document processing devices
System and method for confirming delivery of an electronic message
Network decoys
Attribute category enhanced search
Content protection apparatus and content encryption and decryption apparatus using white-box encryption table
  Randomly Featured Patents
Antireflection layer and process for lithographically structuring a layer
Continuously adjustable neutral density area filter
Electroluminescence element and electroluminescence panel
Self-sensing array of microcantilevers for chemical detection
Grass catcher support assembly for reel mower cutting unit
Decorative toothbrush guard
Microwave transmission device having gyromagnetic materials having different saturation magnetizations
Jewelry tag substrate
Semi-automatic firearm
Light up jump rope