Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Flash memory having improved core field isolation in select gate regions










Image Number 4 for United States Patent #6815292.

A flash memory array having improved core field isolation in select gate regions via shallow trench isolation and field isolation implant after liner oxidation is disclosed. The flash memory array includes a core area and a periphery area, wherein the core area further includes a select gate region. The method of fabricating the flash memory array begins by patterning a layer of nitride over a substrate in active device locations. After the nitride is patterned, a silicon trench etch is performed to form trenches. After forming the trenches, a layer of liner oxide is grown in the trenches. Then, a field implant is performed in both the core area and periphery area to provide field isolation regions for the flash memory array with. Thereafter, poly1 is patterned in the core area to form floating gate and select word-lines.








 
 
  Recently Added Patents
Artificial engine sound control unit, approaching vehicle audible system, and electric vehicle having them
Clusterin antisense therapy for treatment of cancer
Discharge circuit and method
Fused thiazole derivatives as kinase inhibitors
Control method of LPI lamp for LPI vehicle and logic therefor
Systems and methods for automated institutional processing of payments
Data feed management
  Randomly Featured Patents
Varnish coater for printed product
Electronic camera apparatus having image reproducing function and method for controlling reproduction thereof
Control of mineral mining machines
Oil base ink composition
N'-[2,6-Dichloro-4-(substituted-benzylideneamino)phenyl]-N,N-d imethylformamidines
Plywood safety bar
Offshore platform assembly
Ice management system for tiltrotor aircraft
Enhanced etching/smoothing of dielectric surfaces
Shoe