Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Process for manufacturing semiconductor device including lamp annealing










Image Number 5 for United States Patent #6784058.

A process for a semiconductor device includes the following steps applied to a silicon substrate wherein a floating gate electrode having sidewalls is formed above the semiconductor substrate with a tunnel oxide film intervened and wherein active regions are arranged in places adjoining both sides of floating gate electrode, as seen from above, and arsenic is injected into said active regions as an impurity: the lamp annealing step of carrying out a heat treatment in the atmosphere of a first gas mixture which includes nitrogen and oxygen; and the oxygen film formation step of carrying out a heat treatment in the atmosphere of a second gas mixture which includes oxygen so as to form an oxide film on sidewalls of floating gate electrode after the lamp annealing step.








 
 
  Recently Added Patents
Device for preparing a body fluid for a bacteriological analysis
Semiconductor memory apparatus
HYR1 as a target for active and passive immunization against Candida
Memory component and memory device
Fast carrier allocation in multi-carrier systems
Methods and compositions to treat and detect misfolded-SOD1 mediated diseases
Antenna device
  Randomly Featured Patents
Differential conductivity recirculation monitor
Aircraft tail
Chair arm
Efficient and robust routing of potentially-variable traffic for path restoration following link failure
Uranium dioxide process
Cigarette carton assembly
System for recording a color television signal with reduced bandwidth
Transparentizable thermal insulating film for thermal transfer imaging
Symmetrical horizontal continuous casting
Electromagnetic detection system for variable area flowmeter