Resources Contact Us Home
Vertically stacked field programmable nonvolatile memory and method of fabrication

Image Number 19 for United States Patent #6780711.

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

  Recently Added Patents
Circuit and method for generating an AC voltage from a plurality of voltage sources having a temporally variable DC output voltage
Potentiometric-sensor chip, potentiometric assay, and assay kit
System and method for providing radio communication in a land mobile radio system
Biomedical electro-stimulator
Apparatus for transmitting and receiving data in a wireless communication system and method thereof
Method and apparatus of motion vector prediction with extended motion vector predictor
Query processing with specialized query operators
  Randomly Featured Patents
Display screen with graphical user interface
Vehicle air conditioning compressor control system
Process for preparing alcohol soluble condensates of abietic acid and a protein hydrolysate
Rotary phased radial thrust variable drive transmission
Malfunction detecting apparatus
Apparatus, system, and method for redundant identification of a storage medium format
Insulated glass window spacer and method for making window spacer
Method and system for detection of credit card fraud
Method for patterning layer having high reflectance using photosensitive material
Non-phosphate detergent-softening compositions