Resources Contact Us Home
Vertically stacked field programmable nonvolatile memory and method of fabrication

Image Number 14 for United States Patent #6780711.

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

  Recently Added Patents
Packet transmission method, apparatus, and network system
Translation system adapted for query translation via a reranking framework
Fractal method for detecting and filling data gaps within LiDAR data
Portable communication terminal, communication method and control program
Codeword-enhanced peer-to-peer authentication
Wireless communication power control
Performance apparatus, a method of controlling the performance apparatus and a program recording medium
  Randomly Featured Patents
Decoupled synchro-drive robot base
Rotary trench excavator
Deformable flying toy
Idle speed control for DISI engines
Pickup device and electric stringed musical instrument using the pickup device
Method of fabricating semiconductor device by exposing upper sidewalls of contact plug to form charge storage electrode
Disposable receiver
Object oriented apparatus and method for allocating objects on an invocation stack
Optical transit square with focusable crossing telescopes
Spring retainer apparatus and method for facilitating loading of fuel rods into a fuel assembly grid