Resources Contact Us Home
Vertically stacked field programmable nonvolatile memory and method of fabrication

Image Number 11 for United States Patent #6780711.

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

  Recently Added Patents
Laser marking of a card
Concentration measuring apparatus for hydrogen sulfide in gas flow, and method for determining sulfide ion
Hybrid CMOS nanowire mesh device and PDSOI device
Deposited conductive layers for leads of implantable electric stimulation systems and methods of making and using
Electronic device assemblies
Control device of hybrid vehicle
Methods of reverse link power control
  Randomly Featured Patents
Base for roadway marker
Device and method for correcting and stabilizing a deviating curvature of a spinal column
Motor driving apparatus
High molecular weight polymer additive for coating and protective products
Insulation spool apparatus for lining ductwork
In-line microwave warming apparatus
Method and apparatus for aerating
Thiazole-amine compounds for the treatment of neurodegenerative disorders
Compositions for treating acne comprising phytandiol amine
Fluid film seal