Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method and device for biasing a transistor of a radio frequency amplifier stage










Image Number 4 for United States Patent #6778019.

A biasing device includes closed-loop transconductance slaving circuit, able to slave the time average of the base/emitter or gate/source voltage of the amplifier transistor (Q1) to a reference voltage corresponding to a desired quiescent current for the transistor. Moreover, viewed from the base or gate of the amplifier transistor (Q1), the impedance of the base/emitter or gate/source circuit is small at low frequency, and large with respect to the impedance of the radio frequency source within the radio frequency range of the signal. The device can be incorporated in a mobile terminal, such as a cellular mobile phone.








 
 
  Recently Added Patents
Terminal for flat test probe
Modified polyolefin resin for glass fiber treatment, surface-treated glass fiber, and fiber-reinforced polyolefin resin
Semiconductor device having a first conductive member connecting a chip to a wiring board pad and a second conductive member connecting the wiring board pad to a land on an insulator covering
Coating composition, and a process for producing the same
Analogue-to-digital converter
Fiber optic cables and assemblies for fiber toward the subscriber applications
Image processing apparatus and image processing method
  Randomly Featured Patents
Engine overspeed control system
Scalable and extensible framework for data-driven web services
Truss structure
Integrated OLED display and touch screen
Methods for trans-destabilization of specific proteins in vivo and DNA molecules useful therefor
Radial and torsionally controlled magnetic bearing
Interface and bezel for uninterruptible power supply
Thermostat with fixed segment display having both fixed segment icons and a variable text display capacity
Apparatus and method for passive shimming of a superconducting magnet which images human limbs
Layouts for the monolithic integration of CMOS and deposited photonic active layers