Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping










Image Number 13 for United States Patent #6753230.

The present invention provides a method for fabricating a semiconductor device with ultra-shallow super-steep-retrograde epi-channel that is able to overcome limitedly useable energies and to enhance manufacturing productivity than using ultra low energy ion implantation technique that has disadvantage of difficulties to get the enough ion beam current as well as that of prolonged processing time. The inventive method includes the steps of: a method for fabricating a semiconductor device with ultra shallow super-steep-retrograde (hereinafter referred as to SSR) epi-channel, comprising the steps of: forming a channel doping layer below a surface of a semiconductor substrate by implanting decaborane; forming an epi-layer on the channel doping layer; forming sequentially a gate dielectric layer and a gate electrode on the epi-layer; forming source/drain extension areas shallower than the channel doping layer by being aligned at edges of the gate electrode; forming a spacers on lateral sides of the gate electrode; and forming source/drain areas deeper than the channel doping layer by being aligned at edges of the spacer through ion implantation onto the substrate.








 
 
  Recently Added Patents
Systems and methods for managing and utilizing excess corn residue
Decrementing settings for a range of power caps when a power cap is exceeded
Washing-up bowl
Battery pack with connecting device
Electrophoresis display having touch screen and method for driving the touch screen
Method and composition for attracting arthropods by volatizing an acid
Power collecting device, power measuring device, and power collecting method
  Randomly Featured Patents
Composite sheet made of molybdenum and dispersion-strengthened copper
Electronic computer
Auditing correlated events using a secure web single sign-on login
Preparation of substituted ethenes
Error detector for modified duobinary signals
Method for manufacturing a heat insulating sash bar
Probe card assembly with an interchangeable probe insert
Mascara brush
Method for fabricating semiconductor device with vertical channel transistor
Apparatus for detecting defects in pattern