Resources Contact Us Home
Methods of forming DRAM cells

Image Number 13 for United States Patent #6734062.

The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate including a monocrystalline material is bonded to the first substrate. After the bonding, second DRAM sub-structures are formed in electrical connection with the first DRAM sub-structures. The invention also includes a semiconductor structure which includes a capacitor structure, and a first substrate defined to encompass the capacitor structure. The semiconductor structure further includes a monocrystalline silicon substrate bonded to the first substrate and over the capacitor structure. Additionally, the semiconductor structure comprises a transistor gate on the monocrystalline silicon substrate and operatively connected with the capacitor structure to define a DRAM cell.

  Recently Added Patents
Electronic device
Forming agent for gate insulating film of thin film transistor
Electrophotographic photoreceptor, image-forming apparatus, and electrophotographic cartridge
Stowable pet leash and collar
Method and apparatus for optimizing transmission diversity
Centralized behavioral information system
Ascertaining presentation format based on device primary control determination
  Randomly Featured Patents
Ultrashort-pulse source with controllable multiple-wavelength output
Hydrous toothpaste containing TiF.sub.4 and chelating agent
Connector for biometric belt
Management of neurostimulation therapy using parameter sets
Device for absorbing liquid lipids from an aqueous food mixture
System and method for test generation with dynamic constraints using static analysis
Combination product of a 1,4-benzothiepine 1,1-dioxide compound with at least one other active ingredient and the use of the product
Digital loop carrier module for proactive maintenance application