Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low k dielectric materials with inherent copper ion migration barrier










Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.








 
 
  Recently Added Patents
Power brick with actuator mechanism
Hybrid device having a personal digital key and receiver-decoder circuit and methods of use
Vehicle wheel rim
Touch event model
Flange for xerographic photoreceptor
Systems and methods of supporting emergency communications
Computer implementation method for integrating services in a calendar application via meeting request e-mails
  Randomly Featured Patents
Method and system for guiding a vehicle with vision enhancement
Illuminating system
Remote processing of selected vehicle operating parameters
Injection device
Controlling setup or continuation of a call charged from a pre-paid group account
Method for fabricating a thin film build-up structure on a sequentially laminated printed circuit board base
Oil well pipe pickup and laydown apparatus
Single lumen atherectomy catheter device
Developing device and image forming apparatus using the same
Semiconductor device, display device and mobile device