Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low k dielectric materials with inherent copper ion migration barrier










Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.








 
 
  Recently Added Patents
Differential ring oscillator and method for calibrating the differential ring oscillator
Electronic currency, electronic wallet therefor and electronic payment systems employing them
Battery loading and unloading mechanism
Dynamic data filtering system and method
Method and system for providing cloud based network security services
2,5-disubstituted piperidine orexin receptor antagonists
Simplifying lexicon creation in hybrid duplicate detection and inductive classifier systems
  Randomly Featured Patents
Non-resonant two-photon absorption induction method and process for emitting light thereby
Multiple tray desk organizer
Wheel cover for preventing tire marks
Composite microsphere and lubricant mixture
Gastrostomy device with obturator
Method of and splice for repairing poles
Card ejection mechanism for PCMCIA connector
Chemical etching of polymers for metallizing
Utilities container
Catalytic converter heater