Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low k dielectric materials with inherent copper ion migration barrier










Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.








 
 
  Recently Added Patents
N-phenyl-(homo)piperazinyl-benzenesulfonyl or benzenesulfonamide compounds suitable for treating disorders that respond to the modulation of the serotonin 5-HT.sub.6 receptor
Compact multi-functional scanning apparatus with retractable flatbed scanner
Switching element for a valve train of an internal combustion engine
Methods, systems, and computer-readable media for providing an event alert
Method and system for migrating object update messages through synchronous data propagation
Compounds, compositions and methods for reducing lipid levels
Liquid crystal display
  Randomly Featured Patents
Data broadcasting system, server and program storage medium
Trawl shrimp cage
Optical fiber laser fusion splicer
Brake booster device
Apparatus for forming and transporting away tobacco portions
Self-propelled upright vacuum cleaner with offset agitator and motor pivot points
Electromechanical bidirectional rotation device
Graphics system with virtual memory pages and non-power of two number of memory elements
Solar cell system manufacturing method
Packaged dental floss with manual pressure dispensing