Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Low k dielectric materials with inherent copper ion migration barrier Image Number 3 for United States Patent #6730618. An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.       Recently Added Patents Caddy-piller convertible bag Internal combustion engine Semiconductor device Collection of recyclable or waste material Fast detection of convergence or divergence in iterative decoding Image transmission device, image transmission system, and image transmission method Control device, control system, method and computer readable medium for setting   Randomly Featured Patents Apparatus and method for storm shelter Boat anchor Characterizing application performance within a network High intensity illumination light table with attenuating and reflecting means coupled to rhomboid arms Method for making low-topography buried capacitor by a two stage etching process and device made Anchor guide Vertical pipe lining method and system Liquefied gas-fuel supply device for diesel engine Univocal label to be stored by optical devices, method of production of the same and use thereof in the anticounterfeiting and in the identification of products Coated fabric structure for air bag applications © 2006-2008 PatentGenius. All Rights Reserved.