Resources Contact Us Home
Low k dielectric materials with inherent copper ion migration barrier

Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.

  Recently Added Patents
Alternate source programming
Film-forming resins as a carrier for topical application of pharmacologically active agents
Obviation of recovery of data store consistency for application I/O errors
Gaming machine certificate creation and management
Methods, systems, and products for searching interactive menu prompting systems
Circuit board having semiconductor chip embedded therein
  Randomly Featured Patents
Method and device for the on-line testing of a multiple-source antenna
Power line channel-adaptive communications system and method
User interface based on magnetic induction
Liquid stabilizer systems and vinyl halide resin compositions containing same
Curing agents
Carburetor valve assembly
Turbocharger with a variable nozzle device
Apparatus for delivery of pharmaceuticals to the cochlea
Magnetic fastener
Current detecting device, air conditioning apparatus, correction constant calculating system and correction constant calculating method