Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Low k dielectric materials with inherent copper ion migration barrier Image Number 3 for United States Patent #6730618. An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.       Recently Added Patents Catalytic pyrolysis using UZM-44 aluminosilicate zeolite Scalable pixel coverage function-map Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method System and method for providing security in browser-based access to smart cards Polyester resin for toner, electrostatic charge image developing toner, electrostatic charge image developer, toner cartridge, process cartridge, image forming apparatus, and image forming met Brushless motor drive apparatus and drive method Projection screen and projection system having the same   Randomly Featured Patents Infusion pump cartridge Dermal composition for controlling drug flux comprising two acrylic adhesive polymers having different functionalities and different solubility parameters Cellulose-based fiber, and tire cord comprising the same High-frame rate image acquisition and motion analysis system Chromogenic compound Pumpkin carving knife Over-coated product including tableted center and medicament Valve metal compositions and method Frequency hopping spread spectrum passive acoustic wave identification device Control system for variable displacement pumps © 2006-2008 PatentGenius. All Rights Reserved.