Resources Contact Us Home
Low k dielectric materials with inherent copper ion migration barrier

Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.

  Recently Added Patents
Undercabinet plug-in mount
Methods and systems for sending messages regarding an emergency that occurred at a facility
System and method for identifying a target signal in an optical transport network frame structure
Handover signaling in wireless networks
Host route convergence based on sequence values
Systems and methods for adaptive blind mode equalization
Method and apparatus for wireless communication in a mesh network with central control of communication relationships
  Randomly Featured Patents
Magnetic disk memory having a disk pack hub seated at both sides of a disk pack
Method and apparatus for configuring the settings of a communication terminal device from a remote location
Folding system and process for a continuous moving web operation
Production of mixtures rich in 3-chloro-2-trichloromethyl pyridine
Methods of treatment using specific binding agents of human angiopoietin-2
Field effect power generation device
Method for acquiring traversal resource, peer to peer node and peer to peer system
Method and apparatus for residential water test kit
Clock recovery
HGF .beta. chain variants