Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low k dielectric materials with inherent copper ion migration barrier










Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.








 
 
  Recently Added Patents
Fingerprinting apparatus, system, and method
Systems and methods for restoring images
Tree drain grate
Emergent information database management system
Flat panel display
System and methods for weak authentication data reinforcement
Rim for a TV receiver
  Randomly Featured Patents
Diagnostic console
Methods and compositions for treating polycystic ovary syndrome
Process for producing synthetic oil from solid hydrocarbon resources
Composite material having low electromagnetic reflection and refraction
Unit for borehole running and pulling operations
Computer enclosure
Charged particle deflecting system
Method for creating from individual reports a consolidated data set with metadata including information about the last presentation format of data within the individual reports
Solenoidal electric field lamp with reduced electromagnetic interference
Electrical driving system for a wheel chair