Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low k dielectric materials with inherent copper ion migration barrier










Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.








 
 
  Recently Added Patents
Methods and arrangements for realising betting with off-line terminal
Use of LPA for encouraging pregnancy, and fertility agent
Over the counter medicinal container with surface ornamentation
Battery loading and unloading mechanism
Method and system for modularized configurable connector system for ethernet applications
Electronic system and method for compensating the dimensional accuracy of a 4-axis CNC machining system using global and local offsets
Optimized delivery of web application code
  Randomly Featured Patents
Food product
Piperazine-piperidine compounds for use as stabilizers for organic materials
Machining condition determining system and method for sinker electric discharge machining apparatus
Apparatus for forming tubular containers with reinforced edges and container
Light emitting device package
Tracking servo control unit for an information reproducing apparatus
Medical treatment endoscope
Viterbi decoder and Viterbi decoding method
Recovery of o-chlorobenzilidene malononitrile from finely divided mixtures thereof with colloidal silica
Computerized tomographic scanning apparatus driven by rechargeable batteries