Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low k dielectric materials with inherent copper ion migration barrier










Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.








 
 
  Recently Added Patents
Solution based precursors
Test framework of visual components in a multitenant database environment
Potential separation for filling level radar
Electronic device and control method therein
Key management policies for cryptographic keys
Spectral sensor for checking documents of value
Vehicle exterior
  Randomly Featured Patents
Surface spreader with column bypass
Process and apparatus for the production of alcohols
Pipe clamp for plastic supply pipelines, particularly a tapping clamp
Method and system for maintaining a desired service level for a processor receiving excessive interrupts
Magnetic calibration array
Switch drive for a rotary switch
Optical operating apparatus
Digital/analog converter
Apparatus for regenerating desiccants in a closed cycle
Automobile