Resources Contact Us Home
Low k dielectric materials with inherent copper ion migration barrier

Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.

  Recently Added Patents
Connector interface for a cable
Combined high and low frequency stimulation therapy
Creation and use of test cases for automated testing of media-based applications
Carrier for developing electrostatic charge image, developer for developing electrostatic charge image, image forming apparatus, and image forming method
Monitoring device for monitoring a display device
Diazeniumdiolated phosphorylcholine polymers for nitric oxide release
Method and device for reliable estimation of network traffic
  Randomly Featured Patents
Matching various combinations of XPATH URIs to the same XML node
Process for preparing acetic acid by gas-phase oxidation of saturated C4-hydrocarbons and their mixtures with unsaturated C4-hydrocarbons
Film forming composition, insulating film, and electronic device
Two mount and three mount socket design with attachment and alignment
Data transfer device with a post charge logic
Toy building element
Humidification of a PEM fuel cell by air-air moisture exchange
Structural members for insulated vehicle bodies
Stable sizing compositions used during forming of glass fibers and resulting fiber
Polymerization process