Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Low k dielectric materials with inherent copper ion migration barrier Image Number 3 for United States Patent #6730618. An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.       Recently Added Patents Hardware-based parser for packet-oriented protocols Duplex web printer system registration technique Method of controlling a robotic tool Accumulator Schottky and MOSFET+Schottky structures, devices, and methods Communication system for mobile users using adaptive antenna with auxiliary elements Positive resist composition and patterning process   Randomly Featured Patents Motor vehicle Apparatus and method for masked move to and from flags register in a processor File sharing system Semiconductor device, method of manufacturing thereof, circuit board and electronic apparatus Control system to apply vehicle brakes during a transmission directional shift Motor vehicle safety wheel Reclosable package having a zipper closure, slider device and tamper-evident structure Electroencephalograph cap and electrode harness Apparatus for winding a printed product and a protective wrapping into a roll Criteria for usable repetitions of an utterance during speech reference enrollment © 2006-2008 PatentGenius. All Rights Reserved.