Resources Contact Us Home
Low k dielectric materials with inherent copper ion migration barrier

Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.

  Recently Added Patents
System and method for producing statistically valid assay means and ranges for quality control materials
Vehicle tail lamp
Etching method, etching apparatus, and computer-readable recording medium
Method for detecting security error in mobile telecommunications system and device of mobile telecommunications
Power control arrangement for long term evolution time division duplex method and apparatus
Wireless subscriber managing storage of HARQ packets
  Randomly Featured Patents
Method and apparatus for casting steel into a continuous casting mold
Method and apparatus for manufacturing a wrap-around tube
Accessory device with magnetic attachment
Body for motor vehicles
Method and system for I/O scheduler activations
Slim hold drilling
Access control method, access control system, metadata controlling device, and transmitting apparatus
Differential pressure superheat sensor for low refrigerant charge detection
Local context navigation system
Magnetic soap holder