Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Low k dielectric materials with inherent copper ion migration barrier










Image Number 3 for United States Patent #6730618.

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO.sub.2 or Si.sub.3 N.sub.4.








 
 
  Recently Added Patents
Computer program, system, and method for mapping Social Security claiming strategies
Digital photographing apparatus and control method for evaluating validity of an auto-focus operation
Systems and/or methods for using air/wind power to charge/re-charge vehicle batteries
Systems and methods for controlling phasing of advancing substrates in absorbent article converting lines
Pointing device, display apparatus and pointing system, and location data generation method and display method using the same
Xylitol-based anti-mucosal compositions and related methods and compositions
(4940
  Randomly Featured Patents
Method and apparatus for a pulse width modulated DC-DC converter
Swing chair
Printhead integrated circuit assembly with compensation controller
Electronic computer
Rubber composition and rubber sealing device
"T" post puller-pounder
Pattern plate for making moulds intended for the production by sand casting of window seals or similar articles having an undercut bead
Adaptive microwave oven
Animal training device
Distributed and disjoint forwarding and routing system and method