Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects










Image Number 3 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.








 
 
  Recently Added Patents
Methods and arrangements for realising betting with off-line terminal
Methods and apparatus for mitigating interference between co-located collaborating radios
Data distribution unit for vehicle entertainment system
Serving base station selection based on backhaul capability
Television receiver
Apparatus for counting particles in a gas
Multifunction switch for vehicle having lighting module
  Randomly Featured Patents
Managing spool bearing load using variable area flow nozzle
High speed precision planter
Extending cookware handle with end opening
High molecular weight polymer-based prodrugs
Objective lens driving device
Adjustment device and building element
Self-protected, intelligent, power control module
Digital-to-analog converter and sensor-characteristic adjustment circuit
Simulated breast baby bottle
Table tennis trainer