Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects










Image Number 3 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.








 
 
  Recently Added Patents
Secondary marketplace for digital media content
Use of polyamide thermal plastics as low cost electronics potting compounds for munitions applications
Naphthylacetic acids
Dehumidification
Steering apparatus for turning multiple sets of steerable vehicle wheels
Universal apparatus and method for configurably controlling a heating or cooling system
Method and system for using extended fabric features with fibre channel switch elements
  Randomly Featured Patents
Multiple gas fuel delivery system
Butterfly flap valve
Multilayer ceramic capacitor and manufacturing method of the same
Combined thermostat and selector valve arrangement for gas driven heat pump systems
Method for increasing the video throughput in computer systems
Multilayer hollow fiber body and method of making
Drawer for storage cabinet
Antagonist peptides to VEGF receptor Flt-1
Programmable address generator
Sliding mode control unit of electronically controlled throttle device