Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects










Image Number 3 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.








 
 
  Recently Added Patents
Co-operative locking between multiple independent owners of data space
Alternative transport mechanism selection
Anchor device for wooden post
Fixing device and image forming apparatus including the same
Parallel DLL tree initialization
Apparatus and method for classifying images
Apparatus and method for synchronizing robots
  Randomly Featured Patents
Sofa bed spring improvements
Packaging case
Active container management system
Nonvolatile memory controller with scalable pipelined error correction
Image processing circuit
Methods and apparatus for high-impulse fuze booster for insensitive munitions
Peeling machine
Continuous autorefrigerative dewaxing process and apparatus
Process for continuously bonding staple fibers into a stable band and stable band produced according to the aforesaid process
Apparatus and method for assembling a structure comprising frames and shell plates