Resources Contact Us Home
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects

Image Number 3 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.

  Recently Added Patents
Image recording device, image recording method, and computer program product that adds a fluorescent-whitening-agent onto a recording sheet
System, method and program product for guiding correction of semantic errors in code using collaboration records
System for non-destructive image processing
Context-based adaptive binary arithmetic coding engine
Portable electric circular saw
System and method for distributing emergency data messages to public safety answering points in a balanced manner
Memory cell and memory cell array using the same
  Randomly Featured Patents
Combination optics light emitting diode landing light
Power source with evaporative emission recovery
Multi-fit coaxial cable connector
Substituted 8'-pyri(MI)dinyl-dihydrospiro-[cycloalkylamine]-pyrimido[1,2-a]pyrimidin-- 6-one derivatives
Rotary drill bits with protected cutting elements and methods
Offsite financial account onboarding
Alarm data concentration and gathering system
Anti-carjacking apparatus, systems, and methods for hi-speed pursuit avoidance and occupant safety
Oil recovery apparatus
Water volume indicator for an animal waterer