Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects










Image Number 3 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.








 
 
  Recently Added Patents
Dynamic learning method and adaptive normal behavior profile (NBP) architecture for providing fast protection of enterprise applications
Monitoring heap in real-time by a mobile agent to assess performance of virtual machine
Horse stationary tab
System and method for managing investment funds
Synchronization of communication equipment
Light emitting element, method for manufacturing the light emitting element, optical element and method for manufacturing the optical element
Determination of copy number variations using binomial probability calculations
  Randomly Featured Patents
Vertical-axis composite swinging-blade water wheel
MEMS optical components
Information processing apparatus, information processing method, and computer program
Decoding with storage of less bits for less important data
Short-tolerant resistive cross point array
Electronic parking meter
Raising and lowering mechanism, in particular for roller blinds
Fuel injection control system for an internal combustion engine
Gardening tool
Digital product execution control and security