Resources Contact Us Home
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects

Image Number 2 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.

  Recently Added Patents
Soybean cultivar CL1013675
Microbial fuel cell and method of use
Display apparatus and control method thereof
Method and apparatus for predicting object properties and events using similarity-based information retrieval and modeling
Image forming system, prognosis criterion setting apparatus, prognosis apparatus, image forming apparatus and non-transitory computer-readable recording medium
Digital image processing device and processing method thereof
Meat-containing, strip shaped food product and method of making same
  Randomly Featured Patents
Zero fall-through time asynchronous fifo buffer with nonambiguous empty-full resolution
Optical probe
Elm tree
Elastomer coating for buttons, and method therefor
Method of making a coil spring and apparatus therefor
Security document circuit
Lock mechanism for an axle lift suspension
Compact proton exchange membrane (PEM) electrochemical cell stack
Method for controlling clathrate hydrates in fluid systems
Recreational vehicle roof support rafter