Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects










Image Number 2 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.








 
 
  Recently Added Patents
Image forming apparatus
Method for selective deposition of a semiconductor material
Systems and methods for identifying similar documents
Inductive signal transfer system for computing devices
Television apparatus
Coordinate measuring device and method for measuring with a coordinate measuring device
Mobile communication method, mobile station, and network device
  Randomly Featured Patents
Container for a hot water heater or similar article
Vehicle power system with rotatable main assembly
System and method utilizing dynamic beam forming for wireless communication signals
Water pump bearing unit
Medical stapling device
Vanity handbag
Quartz glass thermal sprayed parts and method for producing the same
Quartz guard ring centering features
Method of playing yangtze hold 'EM# and tibet high# poker games
System and method for instruction burst performance profiling for single-processor and multi-processor systems