Resources Contact Us Home
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects

Image Number 2 for United States Patent #6699760.

One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.

  Recently Added Patents
Authenticating messages sent between a vehicle and a central facility
Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
Semiconductor device and manufacturing method thereof
Satellite fleet deployment
Vending machine
Capacitance sensing
Content display monitor
  Randomly Featured Patents
Biodegradable multi-component polymeric materials based on unmodified starch-like polysaccharides
Switch for selectively coupling a sensor or calibration element to a terminal block
Side airbag apparatus
Reproducing machine and a method of determining reproducing conditions
Quick release fasteners
Feeding flock decoy assembly
Circuits, architectures, systems, methods, algorithms and software for reducing contention and/or handling channel access in a network
Wave actuated gas compression apparatus
Stainless steel surface passivation treatment
Methods for fabricating array substrates