Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 7 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Event handling in an integrated execution environment
Solid state lighting devices and associated methods of manufacturing
Noise spectrum tracking in noisy acoustical signals
Image forming apparatus and control method therefor
Interface circuit and interface system
System for implementing dynamic pseudorandom keyboard remapping
Error scanning in flash memory
  Randomly Featured Patents
Fastener for joining a structural member to masonry or concrete
Image quality evaluation system, method, and program utilizing increased difference weighting of an area of focus
Milling machine
Interleukin-1.beta. converting enzyme inhibitors
Device for holding one end of a helical spring
Sun visor
Compound semiconductor light-emitting element and illumination device using the same, and method for manufacturing compound semiconductor light-emitting element
Wavelength conversion device
Flower-shaped garden accessory
Method and system for segmentation and detection of microcalcifications from digital mammograms