Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Image processing system and method
Mobile advertising and compensation-verification system
Vehicle speed verification system and method
Method and apparatus for closed-loop control of anti-tachyarrhythmia pacing using hemodynamic sensor
Dual protocol input device
Resistive random access memory cell and resistive random access memory module
  Randomly Featured Patents
Garage floor covering having the appearance of a highway
Control system for boiler and associated burner
Method for manufacturing fishing net
Process for preparing halo acetals from enamines
Mower sheave fan and drive cover port arrangement
Method for adjusting differential thermal expansion between an electrical socket and a circuit board
Security tag design
Tip of a resectoscope electrode assembly design
Thermocouple junction box with isolated studs
Process for processing motion picture film to reduce strobing