Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
System and method to assess serviceability of device
Method to trace video content processed by a decoder
Method of sheet alignment and method of post-processing comprising the same and method of image formation
Cognitive radio cooperative spectrum sensing method and fusion center performing cognitive radio cooperative spectrum sensing
Buildable dinnerware
Host route convergence based on sequence values
Synergistic fungicidal interactions of 5-fluorocytosine and other fungicides
  Randomly Featured Patents
Vasoocclusion coil with attached fibrous element(s)
Vehicle headlight having component inlaying portions and radiator body
Image forming device, image forming system and image forming method for image with high-density area
Method of forming magnetic brush support member
Invalid bed
Fluid containing string with opening to pass fluid from core
Open-circuit failure detection circuit
Three card video poker
Polyester adhesives
Method for controlling power supply including setting a flag