Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Phosphor adhesive sheet, light emitting diode element including phosphor layer, light emitting diode device, and producing methods thereof
Pre-colored methodology of multiple patterning
Method for generating multi-antenna signals
Piano keyboard with key touch point detection
Developing device
Protective vest
  Randomly Featured Patents
Process for reducing the agglomeration tendency of hydrates in the production effluent
Tricyclo[,6 ]heptane derivatives, process for preparing same, and perfume compositions containing same
Transmission control apparatus and method for vehicle traveling uphill or downhill
Ball grid array modeling for inspecting surface mounted devices
3-ring magnetic anti-gravity support
Underground effluent disposal-delivery system
Convertible sunvisor cap
Spiro (1,3-dioxolane-4,3') quinuclidine compounds
Pixel structure of an organic light-emitting diode display device
System and method for generating X-rays