Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Method and apparatus for training a probe model based machine vision system
Plated photopolymer based fuel cell
System and method for managing virtual world environments based upon existing physical environments
Separator for battery
System, method and computer program product for performing one or more maintenance tasks on a remotely located computer connected to a server computer via a data network
Maize hybrid X95C379
  Randomly Featured Patents
Cryosurgical probe having insulating and heated sheaths
Electrophotographic photosensitive member
Device supporting a light-emitting diode for an automobile signalling system, and a method of manufacturing such a device
Cigarette case with scale
Structural wall building product
Holographic laser protection device
Image-forming apparatus with vibrating part
Condition monitoring device and monitor main unit for condition monitoring device
Method of making an acoustic panel with a triaxial open-weave face sheet