Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Novelty snacks and method of manufacture of same
Control unit including a computing device and a peripheral module which are interconnected via a serial multiwire bus
Fire detector
Methods, systems, and computer program product for virtually modifying surface region curvature to detect protrusions
Method for automatically estimating inertia in a mechanical system
Monofocal photographing lens assembly
Audio processing in a multi-participant conference
  Randomly Featured Patents
Components and methods for use in electro-optic displays
Apparatus for emptying receptacles of particulate material
UV-photoprotective dibenzoylmethane compositions comprising photostabilizing amounts of benzalmalonate silanes
Device and method for fabricating liquid crystal display device
Conversion fluid bed chamber assembly
Method for purifying alcohol esters
Belt shortening device
Variable speed wind turbine generator
Metallocene compositions
Key matrix of a telephone handset