Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Method and system for updating device management application meter read logic
Categorizing bit errors of solid-state, non-volatile memory
Medicament container
Method of preparing highly fluorinated carboxylic acids and their salts
Channel marking for chip mark overflow and calibration errors
Light emitting diode having multi-cell structure and method of manufacturing the same
Inter vehicle communication system
  Randomly Featured Patents
Achromatic lens system
Use of calcium sulfonate based threaded compounds in drilling operations and other severe industrial applications
Preset navigator
Spiral housing pump
Ground impact point prediction system concept for airdrops
Novel dianemycin derivative
Preformulation for tabletting natural mixtures of conjugated estrogens
Display screen with a set of icons
Fluid-product dispensing device
Planar lightwave circuit (PLC) device wavelength tunable light source comprising the same device and wavelength division multiplexing-passive optical network (WDM-PON) using the same light sou