Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Method for parking or exiting a parking bay and for avoiding a collision of a vehicle, and corresponding assistance systems and vehicle
Selecting a converter operating mode of a PA envelope power supply
Method for dynamic multi-level pricing for wireless communications according to quality of service
Method and system for detecting center pivot collision
Electron-beam lithography method with correction of line ends by insertion of contrast patterns
Portable stand
Process information structuring support method
  Randomly Featured Patents
Managing resources to facilitate altering the number of active processors
Automatic gain control
Drive sense adjusting apparatus and drive sense adjusting method
Auger feeder
LC panel with reduced defects having adhesive smoothing layer on an exterior surface of the substrate(s)
Invalid lifting and walking device
Condenser microphone and its output connector
Beverage dispenser
Combined radio frequency and ultrasonic surgical device