Resources Contact Us Home
Electrically pumped edge-emitting photonic bandgap semiconductor laser

Image Number 5 for United States Patent #6674778.

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  Recently Added Patents
Asset control in location tracking system
Autonomous downlink code selection for femto cells
Image decolorizing device
Organic light emitting diode device and fabrication method thereof
Housing for gas flow indicator
Secure provisioning of a portable device using a representation of a key
System and method for oscillator frequency control
  Randomly Featured Patents
Polymerization process
Nonvolatile semiconductor memory
Access control processing system in computer system
Microdisperse polymer/liquid crystal composite
Universally adaptable boregrinding chuck assembly
Mattress construction
Sun shade
Nitrosourea derivatives, pharmaceutical compositions thereof and method of preparation
File conversion
Two-speed passenger lift and pump assembly therefor