Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Power semiconductor rectifier with ring-shaped trenches










Image Number 8 for United States Patent #6670650.

A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n.sup.- drift layer is formed on an n.sup.+ cathode layer 1 by epitaxial growth, and ring-shaped ring trenches having a prescribed width are formed in the n.sup.- drift layer. Oxide films are formed on the side walls of each ring trench. The ring trenches are arranged such that the centers of the rings of the ring trenches adjacent to one another form a triangular lattice unit. A p.sup.- anode layer is formed at the bottom of each ring trench. Schottky contacts are formed at the interface between an anode electrode and the surface of the n.sup.- drift layer. Ohmic contact is established between the surfaces of polysilicon portions and the anode electrode.








 
 
  Recently Added Patents
Method for drug screening and characterization by calcium flux
Drugs for prophylaxis or mitigation of taxane-induced neurotoxicity
Simulation parameter correction technique
Placental tissue grafts
Epoxy composition for encapsulating an optical semiconductor element
DRAM refresh method and system
Molecular sieve
  Randomly Featured Patents
Breakable composite drill screw
Vehicle and battery pack
Film wrapping machine
Air delivery system for regulating thermal growth
Roller adjustment system for in-line skates
Method and apparatus for self servowriting of tracks of a disk drive using an observer based on an equivalent one-dimensional state model
Method of detecting sugars
Shelf-type storage system
Hangman game apparatus
Switch mounting assembly