Resources Contact Us Home
Power semiconductor rectifier with ring-shaped trenches

Image Number 4 for United States Patent #6670650.

A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n.sup.- drift layer is formed on an n.sup.+ cathode layer 1 by epitaxial growth, and ring-shaped ring trenches having a prescribed width are formed in the n.sup.- drift layer. Oxide films are formed on the side walls of each ring trench. The ring trenches are arranged such that the centers of the rings of the ring trenches adjacent to one another form a triangular lattice unit. A p.sup.- anode layer is formed at the bottom of each ring trench. Schottky contacts are formed at the interface between an anode electrode and the surface of the n.sup.- drift layer. Ohmic contact is established between the surfaces of polysilicon portions and the anode electrode.

  Recently Added Patents
Dynamic trunk distribution on egress
Manufacturing aircraft parts
Front cover of an electronic device
Diameter signaling for mobile IPv4
Secure service for enabling communication for calling party when communication service for called party is suspended
Charging member, electrophotographic apparatus, and process cartridge
Hair motion compositor system for use in a hair/fur pipeline
  Randomly Featured Patents
Receiver for electronic fence system
Methods and apparatus for integrity measurement of virtual machine monitor and operating system via secure launch
Shroud for a hydro thrust device
Infrared-aided depth estimation
Interpolation filter and method for switching between integer and fractional interpolation rates
Robotic tape applicator and method
Vehicle seat and passenger's weight measurement device for vehicle seat
Reagent/drug cartridge
Method for producing a biological reagent
Product and method for treating joint disorders in vertebrates