Resources Contact Us Home
Non-volatile memory with improved sensing and method therefor

Image Number 12 for United States Patent #6661708.

Floating gate memories such as EEPROM and flash EEPROM have the memory state of a memory cell thereof determined by sensing the conduction current of the cell. Inherent noise fluctuations in the conduction current during sensing are canceled out by averaging the sensing over a predetermined period of time. In one embodiment, as an integral part of the averaging process, the averaged conduction current is obtained directly as a digital memory state. Accuracy in sensing is therefore greatly improved by avoiding sensing noise with the current and avoiding having to resolve its memory state in the analog domain by comparison with another noisy reference current. In another embodiment, conventional sensing techniques are improved when sensing is made by comparison with a reference current by means of a symmetric, switched or non-switched capacitor differential amplifier.

  Recently Added Patents
Two dimensional magnetic sensor immune to skew angle misalignment
Peptide vectors
Nucleotide sequence coding for variable regions of .beta. chains of human T lymphocyte receptors, corresponding peptide segments and the diagnostic and therapeutic uses
Network decoys
Vehicle grille
Method for forming pattern
  Randomly Featured Patents
Method of detecting hydrogen-producing bacteria
Inductively coupled electrosurgical instrument
Pair of gloves
Howitzer strap-on kit for crew performance evaluation and training method
Purification of bisphenols by removing residual solvent
Use of a two-phase composition for make-up removal of transfer-free make-up compositions
Cooling system and freight container
Computer system with polymorphic fault processing
On-board object detector and on-board object detection method
Portable water purification device