Resources Contact Us Home
Non-volatile memory with improved sensing and method therefor

Image Number 12 for United States Patent #6661708.

Floating gate memories such as EEPROM and flash EEPROM have the memory state of a memory cell thereof determined by sensing the conduction current of the cell. Inherent noise fluctuations in the conduction current during sensing are canceled out by averaging the sensing over a predetermined period of time. In one embodiment, as an integral part of the averaging process, the averaged conduction current is obtained directly as a digital memory state. Accuracy in sensing is therefore greatly improved by avoiding sensing noise with the current and avoiding having to resolve its memory state in the analog domain by comparison with another noisy reference current. In another embodiment, conventional sensing techniques are improved when sensing is made by comparison with a reference current by means of a symmetric, switched or non-switched capacitor differential amplifier.

  Recently Added Patents
Sealing glass for semiconductor device, sealing material, sealing material paste, and semiconductor device and its production process
Cosmetic container
Wafer holder for stepper
Printing apparatus, printing control method, and storage medium
Method of processing an image to clarify text in the image
Semiconductor memory device and method of operating the same
  Randomly Featured Patents
Wet press felt for papermaking machines
Plural leds mounted within a central cutout of a surrounding circular reflective electrode
Railway crossing insert
Pretzel cracker
Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
Keyboard support
Wellbore surveying
Dynamic balancing of performance with block sharing in a storage system
Apparatus and method for cooling a surface of a fireplace
Servo decoder for decoding an error correcting servo code recorded on a disc storage medium