Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Power semiconductor device having layered structure of power semiconductor elements and terminal members Image Number 11 for United States Patent #6642576. An IGBT (121) and a diode (131) are joined onto an element arrangement portion (111a) of a first terminal member (111) and an element arrangement portion (112a) of a second terminal member (112) is joined onto the IGBT (121) and the diode (131). Further, an IGBT (122) and a diode (132) are joined onto the element arrangement portion (112a) of the second terminal member (112) and an element arrangement portion (113a) of a third terminal member (113) is joined onto the IGBT (122) and the diode (132). A transfer mold package (141) is so formed as to house the elements (121, 122, 131, 132). External connection portions (111b, 112b, 113b) of the terminal members (111, 112, 113) are drawn out of the package (141). The element arrangement portion(s) (111a, 113a) of the first and/or third terminal member (111, 113) are/is exposed out of the package (141).       Recently Added Patents FM transmitter with a delta-sigma modulator and a phase-locked loop Fuel cell catalyst regeneration Surgical safety marker Cookware lid handle Respirator belt having attachment slot Radio communication device Self refresh circuit   Randomly Featured Patents Low temperature physical distribution system and method and apparatus for maintaining quality in auction market Secure transfer of content to writable media Laterally adjustable side inserts for the steps of escalators and moving walkways pallets Conductivity probe for viscous liquids Furniture Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate Adhesive dispenser Process for fabricating bottom electrode of capacitor Wing portion of a butterfly-style inside-out heat sink Antireflection, liquid crystal, electrode and nonconductive layer © 2006-2008 PatentGenius. All Rights Reserved.