Resources Contact Us Home
Method of forming an oxide film

Image Number 9 for United States Patent #6586346.

A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

  Recently Added Patents
Semiconductor pressure sensor
Variety corn line NPAA2720
Ranging method and apparatus in passive optical network
Method and device for reliable estimation of network traffic
Image reading apparatus, image reading method and program
Electrode for a plasma torch
  Randomly Featured Patents
Flash pyrolysis of organic solid waste employing ash recycle
Semiconductor light emitting device
Distribution of packets among a plurality of nodes
Valve seal assembly
Laundry rinse containing N-octadecyl-N,N-dimethylamine oxide and N-dihydrogenatedtallow-N,N-dimethylammonium chloride
Heat exchanger and method for manufacturing header tank
Method and compositions for binding loose sheets
Reliable security system by triangulation
Can end for a container
Adjustable-length grill plate